Hydrogen release mechanisms in the breakdown of thin SiO2 films
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Wu, E. (IBM. Microelectronics Division (Vermont, Estats Units d'Amèrica))
American Physical Society

Date:	2004
Abstract:	The mechanism of hydrogen release from the anode Si/SiO2 interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges. The presented results provide strong support to single-electron assisted Si-H bond breakage and discard multiple electron induced incoherent vibrational heating mechanisms.
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; Versió publicada
Published in:	Physical review letters, Vol. 92, Issue 8 (February 2004) , p. 087601, ISSN 1079-7114

DOI: 10.1103/PhysRevLett.92.087601

4 p, 111.6 KB

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