Per citar aquest document: http://ddd.uab.cat/record/115508
Quantum size effects in hafnium-oxide resistive switching
Long, Shibing (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data: 2013
Resum: Discrete changes of conductance of the order of G0 = 2e2/h reported during the unipolar reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. Our results suggest that the reset occurs in two phases: a progressive narrowing of the CF to the limit of a quantum wire (QW) followed by the opening of a spatial gap that exponentially reduces the CF transmission. First principles calculations show that oxygen vacancy paths in HfO2 with single- to few-atom diameters behave as QWs and are capable of carrying current with G0 conductance.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Vacancies ; Quantum wells ; Hopping transport ; Electrodes ; Transport properties ; Electrical properties
Publicat a: Applied Physics Letters, Vol. 102, Issue 18 (May 2013) , p. 183505/1-183505/4, ISSN 1077-3118

DOI: 10.1063/1.4802265


5 p, 1.1 MB

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