Per citar aquest document: http://ddd.uab.cat/record/115883
Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Institute of Physics

Data: 2013
Resum: We demonstrate the feasibility of multilevel recording in Pt/Bi1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi1−δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1−δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. This programming scheme gives rise to well defined resistance states, which form the basis for a multilevel storage nonvolatile memory.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Ferroelectric elements ; Fixed capacitors ; Static stores
Publicat a: Applied Physics Letters, Vol. 103, Issue 26 (December 2013) , p. 263502/1-263502/4, ISSN 1077-3118

DOI: 10.1063/1.4855155


5 p, 1.3 MB

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