Per citar aquest document: http://ddd.uab.cat/record/115884
Impact of graphene polycrystallinity on the performance of graphene field-effect transistors
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Cummings, Aron W. (Institut Català de Nanociencia i Nanotecnologia)
Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Van Tuan, Dinh (Institut Català de Nanociencia i Nanotecnologia)
Kotakoski, Jani (University of Vienna. Faculty of Physics)
Roche, Stephan (Institució Catalana de Recerca i Estudis Avançats)
American Institute of Physics

Data: 2014
Resum: We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Graphene ; Carrier mobility ; Capacitance ; Carrier density ; Low field transport ; Polycrystals
Publicat a: Applied Physics Letters, Vol. 104, Issue 4 (January 2014) , p. 043509/1-043509/4, ISSN 1077-3118

DOI: 10.1063/1.4863842


5 p, 1.7 MB

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