Per citar aquest document: http://ddd.uab.cat/record/115962
Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling
Petti, D. (Politecnico di Milano. Dipartimento di Fisica)
Albisetti, E. (Politecnico di Milano. Dipartimento di Fisica)
Reichlová, H. (Institute of Physics (Praga, República Txeca))
Gázquez Alabart, Jaume (Institut de Ciència de Materials de Barcelona)
Varela, M. (Oak Ridge National Laboratory. Materials Science & Technology Division)
Molina Ruiz, Manel (Universitat Autònoma de Barcelona. Departament de Física)
Lopeandía Fernández, Aitor (Universitat Autònoma de Barcelona. Departament de Física)
Olejník, K. (Institute of Physics (Praga, República Txeca))
Novák, V. (Institute of Physics (Praga, República Txeca))
Fina Martínez, Ignasi (Institut de Ciència de Materials de Barcelona)
Dkhil, B. (Laboratoire Structures, Propriétés et Modélisation des Solides (CNRS))
Hayakawa, J. (Hitachi Ltd. Advanced Research Laboratory)
Marti, X. (Institute of Physics (Praga, República Txeca))
Wunderlich, J. (Institute of Physics (Praga, República Txeca))
Jungwirth, T. (Institute of Physics (Praga, República Txeca))
Bertacco, R. (Politecnico di Milano. Dipartimento di Fisica)
American Institute of Physics

Data: 2013
Resum: In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Néel temperature (TN) along different orientations. Variations of the resistance up to 10% are found upon field cooling in applied fields, in-plane or out-of-plane. Well below TN, these metastable states are insensitive to magnetic fields up to 2 T, thus constituting robust memory states. Our work provides the demonstration of an electrically readable magnetic memory device, which contains no ferromagnetic elements and stores the information in an antiferromagnetic active layer.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Antiferromagnetism ; Tunneling ; Magnetic fields ; Atomic force microscopy ; Ferromagnetism ; Magnetic tunnel junctions
Publicat a: Applied Physics Letters, Vol. 102, Issue 19 (May 2013) , p. 192404/1-192404-4, ISSN 1077-3118

DOI: 10.1063/1.4804429


5 p, 591.3 KB

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