Per citar aquest document: http://ddd.uab.cat/record/115965
Progressive breakdown dynamics and entropy production in ultrathin SiO2 gate oxides
Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data: 2011
Resum: The progressive breakdown of ultrathin (≈2nm) SiO2 gate oxides subjected to constant electrical stress is investigated using a simple equivalent circuit model. It is shown how the interplay among series, parallel, and filamentary conductances that represent the breakdown path and its surroundings leads under certain hypothesis to a sigmoidal current-time characteristic compatible with the experimental observations. The dynamical properties of the breakdown trajectories are analyzed in terms of the logistic potential function, the Lyapunov exponent, and the system’s attractor. It is also shown that the current evolution is compatible with Prigogine’s minimum entropy production principle.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Entropy ; Attractors ; Mesoscopic systems ; Electrical breakdown ; Electrical properties ; Conductors ; Electric currents
Publicat a: Applied Physics Letters, Vol. 98, Issue 25 (June 2011) , p. 253504/1-253504/3, ISSN 1077-3118

DOI: 10.1063/1.3602318


4 p, 302.1 KB

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