Per citar aquest document:
Scopus: 7 cites, Web of Science: 9 cites,
Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field
Fedorov, G. (Georgetown University. Department of Physics)
Barbara, P. (Georgetown University. Department of Physics)
Smirnov, D. (Florida State University. National High Magnetic Field Laboratory)
Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Roche, Stephan (Institució Catalana de Recerca i Estudis Avançats)
American Physical Society

Data: 2010
Resum: We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. Our results unambiguously indicate that an axial magnetic field suppresses the band gap of the nanotube. Quantitative analysis of the data indicates linear dependence of the band gap on magnetic field as well as a linear splitting between the K and K′ subbands of the band structure of the nanotube.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Carbon nanotubes ; Magnetic fields ; Band gap ; Band structure ; Electrodes ; Field effect transistors ; Semiconductor nanotubes ; Nanotube devices ; Semiconductor growth ; Activation energies
Publicat a: Applied Physics Letters, Vol. 96, Issue 13 (March 2010) , p. 132101/1-132101/3, ISSN 1077-3118

DOI: 10.1063/1.3360214

4 p, 423.1 KB

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