Per citar aquest document: http://ddd.uab.cat/record/116044
Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks
Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Falbo, P. (University of Calabria. Dipartimento di Elettronica Informatica e Sistemistica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Crupi, F. (University of Calabria. Dipartimento di Elettronica Informatica e Sistemistica)
American Physical Society

Data: 2008
Resum: A microscopic picture for the progressive leakage current growth in electrically stressed HfxSi1−xON/SiON gate stacks in metal-oxide-semiconductor transistors based on the physics of mesoscopic conductors is proposed. The breakdown spot is modeled as a nanoconstriction connecting two electron reservoirs. We show that after eliminating the tunnelingcurrent component that flows through the nondamaged device area, the postbreakdown conductance exhibits levels of the order of the quantum unit 2e2/h, where e is the electron charge and h the Planck’s constant, as is expected for atomic-sized contacts. Similarities and differences with previous studied systems are discussed.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Tunneling ; Dielectric thin films ; Dielectrics ; Electrical properties ; Electric currents ; Electronic transport ; Interfacial properties ; Leakage currents ; Materials properties ; Transport properties
Publicat a: Applied Physics Letters, Vol. 92, Issue 25 (June 2008) , p. 253505/1-253505/3, ISSN 1077-3118

DOI: 10.1063/1.2949748


4 p, 315.4 KB

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