Per citar aquest document: http://ddd.uab.cat/record/116063
Mesoscopic approach to progressive breakdown in ultrathin SiO2 layers
Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data: 2007
Resum: The opening of a breakdown path across the ultrathin oxide layer in a metal-oxide-semiconductor structure caused by the application of electrical stress can be analyzed within the framework of the physics of mesoscopic conductors. Using the Landauer formula for a quantum point contact, the author is able to show that the saturation of the gate leakage current is linked to the progressive evolution of the constriction’s conductance toward the ballistic transport regime. The possible physical mechanisms responsible for energy dissipation inside the breakdown path as well as the limitations of the proposed approach are discussed.
Drets: Tots els drets reservats.
Llengua: Anglés
Document: article ; recerca ; publishedVersion
Matèria: Tunneling ; Ballistic transport ; Conductors ; Electrical breakdown ; Electrical properties ; Electrodes ; Inelastic scattering ; Leakage currents ; Metal insulator semiconductor structures ; Numerical modeling
Publicat a: Applied Physics Letters, Vol. 91, Issue 5 (July 2007) , p. 053502/1-053502/3, ISSN 1077-3118

DOI: 10.1063/1.2761831


4 p, 286.6 KB

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