Per citar aquest document: http://ddd.uab.cat/record/116111
Out-of-plane exchange bias in [Pt/Co]–IrMn bilayers sputtered on prepatterned nanostructures
Bollero, A. (SPINTEC (Spin Electronics Research))
Baltz, V. (SPINTEC (Spin Electronics Research))
Rodmacq, B. (SPINTEC (Spin Electronics Research))
Dieny, B. (SPINTEC (Spin Electronics Research))
Landis, S. (LETI/D2NT, CEA (Grenoble, França))
Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
American Physical Society

Data: 2006
Resum: Exchange bias effects along the out-of-plane direction have been investigated in arrays of 100nmnanostructures prepared on top of prepatterned substrates, consisting of a ferromagnetic [Pt/Co] multilayer with out-of-plane anisotropy exchange coupled to an antiferromagnetic IrMn layer. A significant loop shift is observed in these nanostructures (dots and trenches). The relative evolutions of the bias fields with the IrMn thickness in the nanostructures and in the continuous film are ascribed to both the effects of the IrMn domain size and thermal activation. Lower coordinated spins in the trenches and at the dot edges are assumed to play a key role on the bias properties. A reduction of the blocking temperature is observed for both the dots and the trenches with respect to the continuous film.
Nota: This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Annealing ; Antiferromagnetism ; Nanostructures ; Thin film structure ; Exchange interactions ; Sputtering ; Temperature measurement ; Coercive force ; Ferromagnetism ; Magnetic anisotropy
Publicat a: Applied Physics Letters, Vol. 89, Issue 15 (October 2006) , p. 152502/1-152502/3, ISSN 1077-3118

DOI: 10.1063/1.2359429


4 p, 289.4 KB

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Documents de recerca > Documents dels grups de recerca de la UAB > Centres i grups de recerca (producció científica) > Ciències > Grup de nanoenginyeria de materials, nanomagnetisme i nanomecànica (Gnm3)
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 Registre creat el 2014-02-21, darrera modificació el 2016-06-04



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