Per citar aquest document: http://ddd.uab.cat/record/116258
High frequency components of current fluctuations in semiconductor tunneling barriers
Oriols Pladevall, Xavier (Universitat Autònoma de Barcelona. Departament d’Enginyeria Electrònica)
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data: 2002
Resum: The power spectral density of current noise in phase-coherent semiconductortunneling scenarios is studied in terms of Bohm trajectories associated to time-dependent wave packets. In particular, the influence of the particles reflected by the barrier on the noise spectrum is analyzed. An enhancement of the power spectral density of the current fluctuations is predicted for very high frequencies. The experimental measurement of this high frequency effect is discussed as a possible test of Bohm trajectories.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Semiconductors ; Tunneling ; Acoustic noise measurement ; Acoustic noise spectra ; Frequency measurement ; High frequency effects ; Noise propagation ; Spectrum analysis
Publicat a: Applied Physics Letters, Vol. 80, Issue 21 (May 2002) , p. 4048-4050, ISSN 1077-3118

DOI: 10.1063/1.1482136


4 p, 300.8 KB

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