Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Blüm, M. C. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Sadewasser, S. (Hahn-Meitner-Institut (Berlin, Alemanya))
American Physical Society

Date:	2002
Abstract:	Atomic-force-microscopy-based techniques have been used to investigate at a nanometer scale the dielectric breakdown (BD) of ultrathin (<6 nm) SiO2films of metal-oxide-semiconductordevices. The results show that BD leads to negative charge at the BD location and the amount of created charge has been estimated. Moreover, the comparison of the charge magnitude generated during current-limited stresses and stresses without current limit demonstrates that the observed BD induced negative charge is related to the structural damage created by the oxide BD.
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	Charged currents ; Thin film devices ; Atomic force microscopy ; Dielectric breakdown ; Dielectric devices ; Dielectric thin films ; Metal insulator semiconductor structures ; Metallic thin films ; Physics demonstrations ; Thin films
Published in:	Applied physics letters, Vol. 81, Issue 19 (October 2002) , p. 3615-3617, ISSN 1077-3118

DOI: 10.1063/1.1519357

4 p, 378.3 KB

The record appears in these collections:
Research literature > UAB research groups literature > Research Centres and Groups (research output) > Engineering > The Reliability of Electron Devices and Circuits group (REDEC)
Articles > Research articles
Articles > Published articles