Soft breakdown fluctuation events in ultrathin SiO2 layers
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data:	1998
Resum:	When an ultrathin (<5 nm) oxide is subjected to electrical stress, several soft-breakdown events can occur prior to the final dielectric breakdown. After the occurrence of such failure events, the current-voltage (I-V)characteristic corresponds to the superposition of highly conductive spots and background conduction through the undegraded capacitor area. In this conduction regime, the application of a low constant voltage gives rise to large leakage current fluctuations in the form of random telegraph signal. Some of these fluctuations have been identified with ON/OFF switching events of one or more local conduction spots, and not with a modulation of their conductance. The experimental soft-breakdown I-Vcharacteristics are shown to be better understood if the spot conduction is considered to be locally limited by the siliconelectrodes and not by the oxide.
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Dielectric breakdown ; Capacitors ; Electrical breakdown ; Electrical properties ; Electrodes ; Leakage currents ; Silicon
Publicat a:	Applied physics letters, Vol. 73, Issue 4 (July 1998) , p. 490-492, ISSN 1077-3118

DOI: 10.1063/1.121910

4 p, 309.7 KB

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