Per citar aquest document: http://ddd.uab.cat/record/116287
Soft breakdown fluctuation events in ultrathin SiO2 layers
Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data: 1998
Resum: When an ultrathin (<5 nm) oxide is subjected to electrical stress, several soft-breakdown events can occur prior to the final dielectric breakdown. After the occurrence of such failure events, the current–voltage (I–V)characteristic corresponds to the superposition of highly conductive spots and background conduction through the undegraded capacitor area. In this conduction regime, the application of a low constant voltage gives rise to large leakage current fluctuations in the form of random telegraph signal. Some of these fluctuations have been identified with ON/OFF switching events of one or more local conduction spots, and not with a modulation of their conductance. The experimental soft-breakdown I–Vcharacteristics are shown to be better understood if the spot conduction is considered to be locally limited by the siliconelectrodes and not by the oxide.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Dielectric breakdown ; Capacitors ; Electrical breakdown ; Electrical properties ; Electrodes ; Leakage currents ; Silicon
Publicat a: Applied Physics Letters, Vol. 73, Issue 4 (July 1998) , p. 490-492, ISSN 1077-3118

DOI: 10.1063/1.121910


4 p, 309.7 KB

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