Per citar aquest document: http://ddd.uab.cat/record/116316
Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics
Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data: 2005
Resum: The transition between well-defined soft and hard breakdown modes to progressive breakdown in ultrathin silicon dioxide based dielectrics is studied by means of the statistics of residual time (the time from first breakdown to device failure). By stressing metal-oxide-semiconductor test capacitors with an oxide thickness of 2. 2nm under different gate bias and temperatures, it is demonstrated that low voltages and temperatures favor stable hard and soft breakdown modes, while high temperatures and voltages lead to a progressive breakdown controlled regime. Our results support the idea that no significant change of the involved physics occurs in the transition from one breakdown regime to the other. The continuous transition from one regime to the other permits one to clearly identify progressive breakdown as hard breakdown, which always requires a certain time to reach the device failure conditions.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Dielectric breakdown ; Electric measurements ; Acceleration measurement ; Capacitors ; Dielectric thin films ; Dielectrics ; Metal insulator semiconductor structures ; Silicon ; Dielectric devices ; Leakage currents
Publicat a: Applied Physics Letters, Vol. 86, Issue 19 (May 2005) , p. 193502/1-193502/3, ISSN 1077-3118

DOI: 10.1063/1.1925316


4 p, 238.9 KB

El registre apareix a les col·leccions:
Articles > Articles de recerca
Articles > Articles publicats

 Registre creat el 2014-02-28, darrera modificació el 2016-06-04



   Favorit i Compartir