Per citar aquest document: http://ddd.uab.cat/record/116326
Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry
Forsen, E. (Technical University of Denmark. Department of Micro and Nanotechnology)
Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Ghatnekar-Nilsson, S. (University of Lund. Solid State Physics and The Nanometer Consortium)
Teva Meroño, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Verd Martorell, Jaume (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Sandberg, R. (Technical University of Denmark. Department of Micro and Nanotechnology)
Svendsen, W. (Technical University of Denmark. Department of Micro and Nanotechnology)
Pérez Murano, Francesc (Institut de Microelectrònica de Barcelona (IMB-CNM))
Esteve Tinto, Jaume (Institut de Microelectrònica de Barcelona (IMB-CNM))
Figueras Costa, Eduardo (Institut de Microelectrònica de Barcelona (IMB-CNM))
Campabadal Segura, Francesca (Institut de Microelectrònica de Barcelona (IMB-CNM))
Montelius, L. (University of Lund. Solid State Physics and The Nanometer Consortium)
Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Boisen, A. (Technical University of Denmark. Department of Micro and Nanotechnology)
American Physical Society

Data: 2005
Resum: Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor(CMOS) chips. Fabricatedresonatorsystems have been designed to have resonance frequencies up to 1. 5 MHz. The systems have been characterized in ambient air and vacuum conditions and display ultrasensitive mass detection in air. A mass sensitivity of 4ag/Hz has been determined in air by placing a single glycerine drop, having a measured weight of 57 fg, at the apex of a cantilever and subsequently measuring a frequency shift of 14. 8 kHz. CMOS integration enables electrostatic excitation, capacitive detection, and amplification of the resonance signal directly on the chip.
Drets: Tots els drets reservats.
Llengua: Anglès
Document: article ; recerca ; publishedVersion
Matèria: Metal insulator semiconductor structures ; Optical resonators ; Electrostatics ; Adsorption ; Vibration resonance ; Capacitance ; Frequency measurement ; Laser resonators ; Nanoelectromechanical systems ; Nanofabrication
Publicat a: Applied Physics Letters, Vol. 87, Issue 4 (July 2005) , p. 043507/1- 043507/3, ISSN 1077-3118

DOI: 10.1063/1.1999838


4 p, 355.8 KB

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