Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale
Fontserè Recuenco, Abel (Centro Nacional de Microelectrónica)
Perez-Tomas, Amador (Centro Nacional de Microelectrónica)
Placidi, Marcel (Centro Nacional de Microelectrónica)
Aguiló Llobet, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics)
Baron, N. (Centre National de la Recherche Scientifique (França))
Chenot, S. (Centre National de la Recherche Scientifique (França))
Cordier, Y. (Centre National de la Recherche Scientifique (França))
Moreno, J. C. (Centre National de la Recherche Scientifique (França))
Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Lanza, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2012
Abstract:	The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. The conductive atomic force microscopy investigation of the HEMT surface has revealed some correlation between the topography and the leakage current, which is analyzed in detail. The effect of introducing a thin dielectric in the gate is also discussed in the micro and the nanoscale.
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió publicada
Subject:	III-V semiconductors ; MODFETs ; Atomic force microscopy ; Leakage currents ; Epitaxy
Published in:	Applied physics letters, Vol. 101, Issue 9 (August 2012) , p. 093505/1-093505/4, ISSN 1077-3118

DOI: 10.1063/1.4748115

5 p, 1.9 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Engineering > The Reliability of Electron Devices and Circuits group (REDEC)
Articles > Research articles
Articles > Published articles