Injected charge to recovery as a parameter to characterize the breakdown reversibility of ultrathin HfSiON gate dielectric
Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rothschild, A. (Interuniversity Micro-Electronics Center)
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Date:	2011
Abstract:	The injected charge to recovery (QR) is presented as a parameter to characterize the dielectric breakdown (BD)reversibility in MOSFETs with ultrathin high-k hafnium based gate dielectric. The procedure to recover the dielectric is explained and the dependences of QR with the current limit during BD, the polarity of the BD-recovery stresses and the number of stress cycles are analyzed.
Grants:	Ministerio de Ciencia e Innovación TEC2007-61294/MIC Agència de Gestió d'Ajuts Universitaris i de Recerca 2009/SGR-783
Rights:	Tots els drets reservats.
Language:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Subject:	Dielectric breakdown (BD) ; BD reversibility ; High-k ; Reliability ; Resistive switching ; CMOS
Published in:	IEEE transactions on device and materials reliability, Vol. 11, Issue 1 (March 2011) , p. 126-130, ISSN 1530-4388

DOI: 10.1109/TDMR.2010.2098032

Post-print 6 p, 2.0 MB

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Research literature > UAB research groups literature > Research Centres and Groups (research output) > Engineering > The Reliability of Electron Devices and Circuits group (REDEC)
Articles > Research articles
Articles > Published articles