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6 p, 1.8 MB

Large-signal model of graphene field-effect transistors. Part I : compact modeling of GFET intrinsic capacitances / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a tool for simulating the electrical behavior of graphene-based integrated circuits, dealing with the DC, transient behavior, and frequency response of the circuit. [...]
2016 - DOI (Digital Object Identifier)

10.1109/TED.2016.2570426
IEEE transactions on electron devices, Vol. 63 Issue 7 (July 2016) , p. 2936 - 2941

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7 p, 921.0 KB

Large-signal model of graphene field-effect transistors. Part II : circuit performance benchmarking / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. [...]
2016 - DOI (Digital Object Identifier)

10.1109/TED.2016.2563464
IEEE transactions on electron devices, Vol. 63, Issue 7 (July 2016) , p. 2942 - 2947

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