Resultats globals: 8 registres trobats en 0.02 segons.
Articles, 7 registres trobats
Documents de recerca, 1 registres trobats
Articles 7 registres trobats  
1.
20 p, 736.9 KB Radio frequency performance projection and stability tradeoff of h-BN encapsulated graphene field-effect transistors / Feijoo, Pedro Carlos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Iglesias, José M. (Universidad de Salamanca. Departamento de Física Aplicada) ; Hamham, El Mokhtar (Universidad de Salamanca. Departamento de Física Aplicada) ; Rengel, Raul (Universidad de Salamanca. Departamento de Física Aplicada) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Hexagonal boron nitride encapsulation significantly improves carrier transport in graphene. This paper investigates the benefit of implementing the encapsulation technique in graphene field-effect transistors (GFETs) in terms of their intrinsic radio frequency (RF) performance, adding the effect of the series resistances at the terminals. [...]
2019 - 10.1109/TED.2018.2890192
IEEE Transactions on Electron Devices, Vol. 66, Issue 3 (March 2019) , p. 1567-1573  
2.
52 p, 1.2 MB Scaling of graphene field-effect transistors supported on hexagonal boron nitride : Radio-frequency stability as a limiting factor / Feijoo, Pedro Carlos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Iglesias, José M. (Universidad de Salamanca. Departamento de Física Aplicada) ; Martin, Maria J. (Universidad de Salamanca) ; Rengel, Raul (Universidad de Salamanca) ; Li, Changfeng (Aalto University) ; Kim, Wonjae (Aalto University) ; Riikonen, Juha (Aalto University) ; Lipsanen, Harri (Aalto University) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field-effect transistors (GFETs) to get a competitive radio-frequency (RF) performance. [...]
2017 - 10.1088/1361-6528/aa9094
Nanotechnology, Vol. 28, Núm. 48 (December 2017) , art. 485203  
3.
7 p, 1.0 MB Revealing the improved stability of amorphous boron-nitride upon carbon doping / Kaya, Onurcan (Institut Català de Nanociència i Nanotecnologia) ; Colombo, Luigi (The University of Texas at Dallas. Department of Materials Science and Engineering) ; Antidormi, Aleandro (Institut Català de Nanociència i Nanotecnologia) ; Lanza, Mario (King Abdullah University of Science and Technology. Department of Material Science and Engineering) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on a large improvement of the thermal stability and mechanical properties of amorphous boron-nitride upon carbon doping. By generating versatile force fields using first-principles and machine learning simulations, we investigate the structural properties of amorphous boron-nitride with varying contents of carbon (from a few percent to 40 at%). [...]
2022 - 10.1039/d2nh00520d
Nanoscale horizons, Vol. 8, Issue 3 (March 2022) , p. 361-367  
4.
8 p, 2.8 MB Emerging properties of non-crystalline phases of graphene and boron nitride based materials / Antidormi, Aleandro (Institut Català de Nanociència i Nanotecnologia) ; Colombo, Luigi (The University of Texas at Dallas. Department of Materials Science and Engineering) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We review recent developments on the synthesis and properties of two-dimensional materials which, although being mainly of an sp bonding character, exhibit highly disordered, non-uniform and structurally random morphologies. [...]
2022 - 10.1016/j.nanoms.2021.03.003
Nano Materials Science, Vol. 4, issue 1 (March 2022) , p. 10-17  
5.
20 p, 1.8 MB Thermal and transport properties of pristine single-layer hexagonal boron nitride : a first principles investigation / Illera, Sergio (Institut Català de Nanociència i Nanotecnologia) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
Molecular dynamics is used in combination with density functional theory to determine the thermal transport properties of the single-layer hexagonal boron nitride (SL h-BN) from ab initio calculations. [...]
2017 - 10.1103/PhysRevMaterials.1.044006
Physical review materials, Vol. 1, issue 4 (Sep. 2017) , art. 44006
2 documents
6.
25 p, 7.5 MB Electrical and Thermal Transport in Coplanar Polycrystalline Graphene-hBN Heterostructures / Barrios Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Mortazavi, Bohayra (Bauhaus-Universität Weimar (Alemanya)) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Martínez Gordillo, Rafael (Aix-Marseille Université) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ; Rabczuk, Timon (Bauhaus-Universität Weimar (Alemanya)) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present a theoretical study of electronic and thermal transport in polycrystalline heterostructures combining graphene (G) and hexagonal boron nitride (hBN) grains of varying size and distribution. [...]
2017 - 10.1021/acs.nanolett.6b04936
Nano letters, Vol. 17 Núm. 3 (March 2017) , p. 1660-1664  
7.
13 p, 1.6 MB Influence of Defects in Boron Nitride Nanotubes in the Adsorption of Molecules : Insights from B3LYP-D2* Periodic Simulations / Matarín, Oriol (Universitat Autònoma de Barcelona. Departament de Química) ; Rimola, Albert (Universitat Autònoma de Barcelona. Departament de Química)
The adsorption of H2O, NH3 and HCOOH as polar molecules and C6H6 and CH4 as non-polar ones on a series of zig-zag (6,0) single-walled boron nitride nanotubes (BNNTs) both being defect-free (P_BNNT) and containing defects at the nanotube walls has been studied by means of B3LYP-D2* periodic calculations. [...]
2016 - 10.3390/cryst6050063
Crystals, Vol. 6 (May 2016) , p. 1-13  

Documents de recerca 1 registres trobats  
1.
134 p, 10.7 MB Atomistic simulations in hybrid C/BN structures / Martínez Gordillo, Rafael ; Pruneda, Miguel, dir. ; García, Gemma ; Universitat Autònoma de Barcelona. Departament de Física
Grafeno es un material sobresaliente que ha sido el foco de atención de muchos científicos en años recientes. Junto con el grafeno, aparecieron muchos otros materiales bidimensionales (2D) como BN, dicalcogenuros de metales, ZnO, entre otros. [...]
Graphene is an outstanding material which has been the focus of attention of many scientist in recent years. With graphene, there appear many other two-dimensional (2D) materials like BN, metal dichalcogenides, ZnO, beside others. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2014  

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