Resultats globals: 5 registres trobats en 0.02 segons.
Articles, 5 registres trobats
Articles 5 registres trobats  
1.
28 p, 4.8 MB Mineralogical Distribution of Germanium, Gallium and Indium at the Mt Carlton High-Sulfidation Epithermal Deposit, NE Australia, and Comparison with Similar Deposits Worldwide / Sahlström, Fredrik (James Cook University) ; Arribas, Antonio (Akita University) ; Dirks, Paul (James Cook University) ; Corral, Isaac (James Cook University) ; Chang, Zhaoshan (James Cook University)
Germanium, gallium and indium are in high demand due to their growing usage in high-tech and green-tech applications. However, the mineralogy and the mechanisms of concentration of these critical elements in different types of hydrothermal ore deposits remain poorly constrained. [...]
2017 - 10.3390/min7110213
Minerals, Vol. 7, Issue 11 (November 2017) , art. 213  
2.
25 p, 779.1 KB Colloidal Silicon-Germanium Nanorod Heterostructures / Lu, Xiaotang (University of Texas. Texas Materials Institute) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Korgel, Brian A. (University of Texas. Texas Materials Institute)
Colloidal nanorods with axial Si and Ge heterojunction segments were produced by solution-liquid-solid (SLS) growth using Sn as a seed metal and trisilane and diphenylgermane as Si and Ge reactants. The low solubility of Si and Ge in Sn helps to generate abrupt Si-Ge heterojunction interfaces. [...]
2017 - 10.1021/acs.chemmater.7b03868
Chemistry of materials, Vol. 29, Issue 22 (November 2017) , p. 9786-9792  
3.
8 p, 2.8 MB Surface hydrogen enables subeutectic vapor-liquid-solid semiconductor nanowire growth / Sivaram, Saujen V. (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering) ; Hui, Ho Yee (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Filler, Michael A. (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering)
Vapor-liquid-solid nanowire growth below the bulk metal-semiconductor eutectic temperature is known for several systems; however, the fundamental processes that govern this behavior are poorly understood. [...]
2016 - 10.1021/acs.nanolett.6b01640
Nano letters, Vol. 16, issue 11 (Sep. 2016) , p. 6717-6723  
4.
4 p, 383.6 KB Density control on self-assembling of Ge islands using carbon-alloyed strained SiGe layers / Bernardi, Alessandro (Institut de Ciència de Materials de Barcelona) ; Alonso Carmona, Maria Isabel (Institut de Ciència de Materials de Barcelona) ; Goñi, Alejandro (Institut de Ciència de Materials de Barcelona) ; Ossó Torné, J. Oriol (Institut de Ciència de Materials de Barcelona) ; Garriga, Miquel (Institut de Ciència de Materials de Barcelona) ; American Physical Society
The authors show that by deposition of 0. 1 ML of carbon prior to the self-assembledgrowth of Gequantum dots on a strained Si1−xGexbuffer layer a striking decrease in dot density by two orders of magnitude from about 1011to109cm−2 occurs when the Ge content of the buffer layer increases from 0% to 64%. [...]
2006 - 10.1063/1.2349317
Applied physics letters, Vol. 89, Issue 10 (September 2006) , p. 101921/1-101921/3  
5.
4 p, 337.7 KB Cross-plane thermal conductivity reduction of vertically uncorrelated Ge/Si quantum dot superlattices / Álvarez Quintana, Jaime (Universitat Autònoma de Barcelona. Departament de Física) ; Àlvarez Calafell, Francesc Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; Rodríguez-Viejo, Javier (Universitat Autònoma de Barcelona. Departament de Física) ; Jou i Mirabent, David, 1953- (Universitat Autònoma de Barcelona. Departament de Física) ; Lacharmoise, Paul Dominique (Institut de Ciència de Materials de Barcelona) ; Bernardi, Alessandro (Institut de Ciència de Materials de Barcelona) ; Goñi, Alejandro (Institut de Ciència de Materials de Barcelona) ; Alonso Carmona, Maria Isabel (Institut de Ciència de Materials de Barcelona) ; American Physical Society
A drastic reduction in temperature dependent cross-plane thermal conductivity κ occurs in Gequantum dotsuperlattices (QDSLs), depending on the vertical correlation between dots. Measurements show at least a twofold decrease of κ in uncorrelated dot structures as compared to structures with the same Si spacer of 20nm but good vertical dot alignment. [...]
2008 - 10.1063/1.2957038
Applied physics letters, Vol. 93, Issue 1 (July 2008) , p. 013112/1-013112/3  

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