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Resultats globals: 5 registres trobats en 0.04 segons.
Articles, 5 registres trobats
Articles 5 registres trobats  
1.
4 p, 355.8 KB Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry / Forsen, E. (Technical University of Denmark. Department of Micro and Nanotechnology) ; Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Ghatnekar-Nilsson, S. (University of Lund. Solid State Physics and The Nanometer Consortium) ; Teva Meroño, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Verd Martorell, Jaume (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Sandberg, R. (Technical University of Denmark. Department of Micro and Nanotechnology) ; Svendsen, W. (Technical University of Denmark. Department of Micro and Nanotechnology) ; Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Esteve, Jaume (Institut de Microelectrònica de Barcelona) ; Figueras Costa, Eduardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Campabadal, Francesca (Institut de Microelectrònica de Barcelona) ; Montelius, L. (University of Lund. Solid State Physics and The Nanometer Consortium) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Boisen, A. (Technical University of Denmark. Department of Micro and Nanotechnology) ; American Physical Society
Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor(CMOS) chips. Fabricatedresonatorsystems have been designed to have resonance frequencies up to 1. [...]
2005 - 10.1063/1.1999838
Applied physics letters, Vol. 87, Issue 4 (July 2005) , p. 043507/1- 043507/3  
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2.
4 p, 238.9 KB Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics / Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
The transition between well-defined soft and hard breakdown modes to progressive breakdown in ultrathin silicon dioxide based dielectrics is studied by means of the statistics of residual time (the time from first breakdown to device failure). [...]
2005 - 10.1063/1.1925316
Applied physics letters, Vol. 86, Issue 19 (May 2005) , p. 193502/1-193502/3  
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3.
4 p, 378.3 KB Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy / Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Blüm, M. C. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Sadewasser, S. (Hahn-Meitner-Institut (Berlin, Alemanya)) ; American Physical Society
Atomic-force-microscopy-based techniques have been used to investigate at a nanometer scale the dielectric breakdown (BD) of ultrathin (<6 nm) SiO2films of metal-oxide-semiconductordevices. The results show that BD leads to negative charge at the BD location and the amount of created charge has been estimated. [...]
2002 - 10.1063/1.1519357
Applied physics letters, Vol. 81, Issue 19 (October 2002) , p. 3615-3617  
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4.
4 p, 286.6 KB Mesoscopic approach to progressive breakdown in ultrathin SiO2 layers / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
The opening of a breakdown path across the ultrathin oxide layer in a metal-oxide-semiconductor structure caused by the application of electrical stress can be analyzed within the framework of the physics of mesoscopic conductors. [...]
2007 - 10.1063/1.2761831
Applied physics letters, Vol. 91, Issue 5 (July 2007) , p. 053502/1-053502/3  
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5.
4 p, 345.8 KB Electrical characterization of the soft breakdown failure mode in MgO layers / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; O'Connor, Eamon (University College Cork. Tyndall National Institute) ; Hughes, Greg (Dublin City University. School of Physical Sciences) ; Casey, Patrick (Dublin City University. School of Physical Sciences) ; Cherkaoui, Karim (University College Cork. Tyndall National Institute) ; Monaghan, S. (University College Cork. Tyndall National Institute) ; Long, R. (University College Cork. Tyndall National Institute) ; O'Connell, Deborah (University College Cork. Tyndall National Institute) ; Hurley, Paul K. (University College Cork. Tyndall National Institute) ; American Physical Society
The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. [...]
2009 - 10.1063/1.3167827
Applied physics letters, Vol. 95, Issue 1 (July 2009) , p. 012901/1-012901/3  
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