Resultats globals: 3 registres trobats en 0.03 segons.
Articles, 3 registres trobats
Articles 3 registres trobats  
1.
8 p, 2.6 MB Low-frequency noise parameter extraction method for single-layer graphene FETs / Mavredakis, Nikolaos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Wei, Wei (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ; Pallecchi, Emiliano (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ; Vignaud, Dominique (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ; Happy, Henri (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ; Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ; Schaefer, Nathan (Institut Català de Nanociència i Nanotecnologia) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this article, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single-layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. [...]
2020 - 10.1109/TED.2020.2978215
IEEE transactions on electron devices, Vol. 67, issue 5 (May 2020) , p. 2093-2099  
2.
21 p, 2.8 MB Velocity Saturation Effect on Low Frequency Noise in Short Channel Single Layer Graphene Field Effect Transistors / Mavredakis, Nikolaos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Wei, Wei (Institute of Electronics, Microelectronics and Nanotechnology) ; Pallecchi, Emiliano (Institute of Electronics, Microelectronics and Nanotechnology) ; Vignaud, Dominique (Institute of Electronics, Microelectronics and Nanotechnology) ; Happy, Henri (Institute of Electronics, Microelectronics and Nanotechnology) ; Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Graphene devices for analog and radio frequency (RF) applications are prone to low frequency noise (LFN) due to its up conversion to undesired phase noise at higher frequencies. Such applications demand the use of short channel graphene transistors (GFETs) that operate at high electric fields in order to ensure a high speed. [...]
2019 - 10.1021/acsaelm.9b00604
ACS applied electronic materials, Vol. 1, Issue 12 (December 2019) , p. 2626-2636  
3.
3 p, 2.8 MB Noise modeling and depth calibration for Time-Of-Flight cameras [Extended Abstract of Ph.D Thesis] / Belhedi, Amira
3D cameras open new perspectives in different application fields such as 3D reconstruction, Augmented Reality and video-surveillance since they provide depth information at high frame-rates. However, they have limitations that affect the accuracy of their measures. [...]
2014 - 10.5565/rev/elcvia.580
ELCVIA : Electronic Letters on Computer Vision and Image Analysis, Vol. 13, Núm. 2 (2014) , p. 51-53
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