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1.
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11 p, 11.1 MB |
Epitaxially Driven Phase Selectivity of Sn in Hybrid Quantum Nanowires
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Khan, Sabbir A. (Danish Fundamental Metrology) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Olsteins, Dags (University of Copenhagen) ;
Lampadaris, Charalampos (University of Copenhagen) ;
Carrad, Damon James (Technical University of Denmark) ;
Liu, Yu (University of Copenhagen) ;
Quiñones, Judith (Institut Català de Nanociència i Nanotecnologia) ;
Spadaro, Maria Chiara (Institut Català de Nanociència i Nanotecnologia) ;
Sand Jespersen, Thomas (Technical University of Denmark) ;
Krogstrup, Peter (University of Copenhagen) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Hybrid semiconductor-superconductor nanowires constitute a pervasive platform for studying gate-tunable superconductivity and the emergence of topological behavior. Their low dimensionality and crystal structure flexibility facilitate unique heterostructure growth and efficient material optimization, crucial prerequisites for accurately constructing complex multicomponent quantum materials. [...]
2023 -  10.1021/acsnano.3c02733
ACS nano, Vol. 17, Issue 12 (June 2023) , p. 11794-11804
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2.
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12 p, 7.5 MB |
Enhancement of proximity-induced superconductivity in a planar Ge hole gas
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Aggarwal, Kushagra (Institute of Science and Technology Austria) ;
Hofmann, Andrea (Institute of Science and Technology Austria) ;
Jirovec, D (Institute of Science and Technology Austria) ;
Prieto, Ivan (Institute of Science and Technology Austria) ;
Sammak, Amir (QuTech and Netherlands Organisation for Applied Scientific Research) ;
Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Veldhorst, Menno (QuTech and Kavli Institute of Nanoscience) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Scappucci, Giordano (QuTech and Kavli Institute of Nanoscience) ;
Danon, Jeroen (Norwegian University of Science and Technology. Department of Physics) ;
Katsaros, Georgios (Institute of Science and Technology Austria)
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. [...]
2021 - 10.1103/PhysRevResearch.3.L022005
Physical Review Research, Vol. 3, issue 2 (April-June 2021) , art. L022005
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3.
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8 p, 1.4 MB |
Quantifying thermal transport in buried semiconductor nanostructures : Via cross-sectional scanning thermal microscopy
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Spièce, Jean (Lancaster University. Physics Department) ;
Evangeli, Charalambos (Lancaster University. Physics Department) ;
Robson, Alexander J. (Lancaster University. Physics Department) ;
Sachat, Alexandros el (Institut Català de Nanociència i Nanotecnologia) ;
Haenel, Linda (University of Stuttgart) ;
Alonso, M. Isabel (Institut de Ciència de Materials de Barcelona) ;
Garriga, Miquel (Institut de Ciència de Materials de Barcelona) ;
Robinson, Benjamin James (Lancaster University. Material Science Institute) ;
Oehme, Michael (University of Stuttgart) ;
Schulze, Jörg (University of Stuttgart) ;
Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ;
Sotomayor Torres, Clivia (Institució Catalana de Recerca i Estudis Avançats) ;
Kolosov, Oleg Victor (Lancaster University. Material Science Institute)
Managing thermal transport in nanostructures became a major challenge in the development of active microelectronic, optoelectronic and thermoelectric devices, stalling the famous Moore's law of clock speed increase of microprocessors for more than a decade. [...]
2021 - 10.1039/d0nr08768h
Nanoscale, Vol. 13, Issue 24 (June 2021) , p. 10829-10836
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4.
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18 p, 7.5 MB |
Graphene on two-dimensional hexagonal BN, AlN, and GaN : electronic, spin-orbit, and spin relaxation properties
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Zollner, Klaus (University of Regensburg. Institute for Theoretical Physics) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Fabian, Jaroslav (University of Regensburg. Institute for Theoretical Physics)
We investigate the electronic band structure of graphene on a series of two-dimensional hexagonal nitride insulators hXN, X=B, Al, and Ga, with first-principles calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and spin-orbit coupling (SOC) from the low-energy Dirac bands of the proximitized graphene. [...]
2021 - 10.1103/PhysRevB.103.075129
Physical review B, Vol. 103, issue 7 (Feb. 2021) , art. 75129
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5.
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13 p, 1.5 MB |
Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor
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Chikoidze, Ekaterine (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Sartel, Corinne (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Mohamed, Hagar (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Madaci, Ismail (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ;
Modreanu, Myrcea (University College Cork. Tyndall National Institute) ;
Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ;
Rubio, Carles (Institut Català de Nanociència i Nanotecnologia) ;
Arnold, Christophe (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Sallet, Vincent (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Dumont, Yves. (Université Paris-Saclay. Groupe d'Etude de la Matière Condensée) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia)
While there are several n-type transparent semiconductor oxides (TSO) for optoelectronic applications (e. g. LEDs, solar cells or display TFTs), their required p-type counterpart oxides are known to be more challenging. [...]
2019 - 10.1039/c9tc02910a
Journal of Materials Chemistry C, Vol. 7, issue 33 (Sep. 2019) , p. 10231-10239
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6.
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19 p, 1.0 MB |
P-type β-gallium oxide : a new perspective for power and optoelectronic devices
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Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Fellous, Adel (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Sauthier, Guillaume (Institut Català de Nanociència i Nanotecnologia) ;
Tchelidze, Tamar (Ivane Javakhishvili Tbilisi State University. Department of Physics) ;
Ton-That, C. (University of Technology Sydney) ;
Huynh, Tung Thanh (University of Technology Sydney) ;
Phillips, Matthew (University of Technology Sydney) ;
Russell, Stephen A. O. (University of Warwick) ;
Jennings, M. R. (University of Warwick) ;
Berini, Bruno (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Jomard, François (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS)
Wide-bandgap semiconductors (WBG) are expected to be applied to solid-state lighting and power devices, supporting a future energy-saving society. Here we present evidence of p-type conduction in the undoped WBG β-Ga O . [...]
2017 - 10.1016/j.mtphys.2017.10.002
Materials today physics, Vol. 3 (December 2017) , p. 118-126
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8.
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9 p, 1.2 MB |
Segregation scheme of indium in AlGaInAs nanowire shells
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Francaviglia, Luca (École Polytechnique Fédérale de Lausanne) ;
Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Di Russo, Enrico (Université de Rouen) ;
Escobar Steinvall, Simon (École Polytechnique Fédérale de Lausanne) ;
Segura Ruiz, Jaime (European Synchrotron Radiation Facility) ;
Potts, Heidi A. (École Polytechnique Fédérale de Lausanne) ;
Friedl, Martin (École Polytechnique Fédérale de Lausanne) ;
Rigutti, Lorenzo (Université de Rouen) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Quaternary alloys enable the independent optimization of different semiconductor properties, such as the separate tuning of the band gap and the lattice constant. Nanowire core-shell structures should allow a larger range of compositional tuning as strain can be accommodated in a more effective manner than in thin films. [...]
2019 - 10.1103/PhysRevMaterials.3.023001
Physical review materials, Vol. 3, Issue 2 (February 2019) , art. 23001
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9.
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10.
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22 p, 2.5 MB |
Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality
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Zamani, Mahdi (École Polytechnique Fédérale de Lausanne) ;
Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Francaviglia, Luca (École Polytechnique Fédérale de Lausanne) ;
Güniat, Lucas (École Polytechnique Fédérale de Lausanne) ;
Ghisalberti, Lea (École Polytechnique Fédérale de Lausanne) ;
Potts, Heidi A. (École Polytechnique Fédérale de Lausanne) ;
Friedl, Martin (École Polytechnique Fédérale de Lausanne) ;
Markov, Edoardo. (École Polytechnique Fédérale de Lausanne) ;
Kim, Wonjong (École Polytechnique Fédérale de Lausanne) ;
Leran, Jean-Baptiste (École Polytechnique Fédérale de Lausanne) ;
Dubrovskii, Vladimir G. (ITMO University) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds. Nanowires grow mostly along the (111) direction for energetic reasons. Arsenide and phosphide nanowires grow along (111)B, implying a group V termination of the (111) bilayers. [...]
2018 - 10.1039/c8nr05787g
Nanoscale, Vol. 10, Issue 36 (September 2018) , p. 17080-17091
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