Resultats globals: 6 registres trobats en 0.03 segons.
Articles, 6 registres trobats
Articles 6 registres trobats  
1.
13 p, 10.7 MB Pyroelectric thin films - Past, present, and future / Velarde, Gabriel (University of California, Berkeley. Department of Materials Science and Engineering) ; Pandya, Shishir (University of California, Berkeley. Department of Materials Science and Engineering) ; Karthik, J. (Microsoft) ; Pesquera, David (Institut Català de Nanociència i Nanotecnologia) ; Martin, Lane W. (Lawrence Berkeley National Laboratory. Materials Sciences Division)
Pyroelectrics are a material class that undergoes a change in polarization as the temperature of the system is varied. This effect can be utilized for applications ranging from thermal imaging and sensing to waste-heat energy conversion to thermally driven electron emission. [...]
2021 - 10.1063/5.0035735
APL materials, Vol. 9, issue 1(Jan. 2021) , art. 010702  
2.
8 p, 1.2 MB Thin film oxide-ion conducting electrolyte for near room temperature applications / Garbayo, Íñigo (Institut de Recerca en Energia de Catalunya) ; Chiabrera, Francesco Maria (Institut de Recerca en Energia de Catalunya) ; Alayo Bueno, Nerea (Institut de Recerca en Energia de Catalunya) ; Santiso, José (Institut Català de Nanociència i Nanotecnologia) ; Morata, Alex (Institut de Recerca en Energia de Catalunya) ; Tarancón Rubio, Albert (Institut de Recerca en Energia de Catalunya)
Stabilized bismuth vanadate thin films are presented here as superior oxide ionic conductors, for application in solid state electrochemical devices operating near room temperature. Widely studied in the 90s in bulk form due to their unbeatable ionic conduction, this family of materials was finally discarded due to poor stability above 500 °C. [...]
2019 - 10.1039/c9ta07632h
Journal of materials chemistry, Vol. 7, Issue 45 (December 2019) , p. 25772-25778  
3.
4 p, 378.3 KB Breakdown-induced negative charge in ultrathin SiO2 films measured by atomic force microscopy / Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Blüm, M. C. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Sadewasser, S. (Hahn-Meitner-Institut (Berlin, Alemanya)) ; American Physical Society
Atomic-force-microscopy-based techniques have been used to investigate at a nanometer scale the dielectric breakdown (BD) of ultrathin (<6 nm) SiO2films of metal-oxide-semiconductordevices. The results show that BD leads to negative charge at the BD location and the amount of created charge has been estimated. [...]
2002 - 10.1063/1.1519357
Applied physics letters, Vol. 81, Issue 19 (October 2002) , p. 3615-3617  
4.
4 p, 597.2 KB Microstructural characterization of L10 FePt/MgO nanoparticles with perpendicular anisotropy / Zhang, Y. (University of Delaware. Department of Physics and Astronomy) ; Wan, J. (University of Delaware. Department of Physics and Astronomy) ; Skumryev, Vassil (University of Delaware. Department of Physics and Astronomy) ; Stoyanov, S. (University of Delaware. Department of Physics and Astronomy) ; Huang, Y. (University of Delaware. Department of Physics and Astronomy) ; Hadjipanayis, G. C. (University of Delaware. Department of Physics and Astronomy) ; Weller, D. (Seagate Technology (Pittsburgh, Estats Units d'Amèrica)) ; American Physical Society
L10 FePt nanoparticles with perpendicular magnetic anisotropy were fabricated on a heated MgO substrate by using an atomic deposition technique. The microstructure of the FePt nanoparticles was studied by transmission electron microscopy and high resolution transmission electron microcopy. [...]
2004 - 10.1063/1.1827348
Applied physics letters, Vol. 85, Issue 22 (December 2004) , p. 5343-5345  
5.
4 p, 404.7 KB Localized and distributed mass detectors with high sensitivity based on thin-film bulk acoustic resonators / Campanella, Humberto (Centro Nacional de Microelectrónica) ; Esteve, Jaume (Centro Nacional de Microelectrónica) ; Montserrat, Josep (Centro Nacional de Microelectrónica) ; Uranga del Monte, Aránzazu (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Romano Rodríguez, Alberto (Universitat de Barcelona. Departament d'Electrònica) ; American Physical Society
A mass sensor based on thin-film bulk acoustic resonator, intended for biomolecular applications, is presented. The thin film is a (002) AlN membrane, sputtered over Ti/Pt on a (001) Si wafer, and released by surface micromachining of silicon. [...]
2006 - 10.1063/1.2234305
Applied physics letters, Vol. 89, Issue 3 (July 2006) , p. 033507/1-033507/3  
6.
4 p, 337.7 KB Cross-plane thermal conductivity reduction of vertically uncorrelated Ge/Si quantum dot superlattices / Álvarez Quintana, Jaime (Universitat Autònoma de Barcelona. Departament de Física) ; Àlvarez Calafell, Francesc Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; Rodríguez-Viejo, Javier (Universitat Autònoma de Barcelona. Departament de Física) ; Jou i Mirabent, David, 1953- (Universitat Autònoma de Barcelona. Departament de Física) ; Lacharmoise, Paul Dominique (Institut de Ciència de Materials de Barcelona) ; Bernardi, Alessandro (Institut de Ciència de Materials de Barcelona) ; Goñi, Alejandro (Institut de Ciència de Materials de Barcelona) ; Alonso Carmona, Maria Isabel (Institut de Ciència de Materials de Barcelona) ; American Physical Society
A drastic reduction in temperature dependent cross-plane thermal conductivity κ occurs in Gequantum dotsuperlattices (QDSLs), depending on the vertical correlation between dots. Measurements show at least a twofold decrease of κ in uncorrelated dot structures as compared to structures with the same Si spacer of 20nm but good vertical dot alignment. [...]
2008 - 10.1063/1.2957038
Applied physics letters, Vol. 93, Issue 1 (July 2008) , p. 013112/1-013112/3  

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