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       Contents: This is the author's version of a work that was accepted for publication in Microelectronic engineering (Ed. Elsevier). Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Maestro, M. et al. "Analysis of set and reset mechanisms in Ni/HfO2-based RRAM with fast ramped voltages" in Microelectronic engineering, vol. 147 (Nov. 2015), p. 176-179. DOI 10.1016/j.mee.2015.04.057
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