19adde61ae397f8bea7530af7df3eca4 pmc_33670539.pdf 81180afc86113946b30a880521ba6fbb8d4e4700 pmc_33670539.pdf 8614c21fe8fa5a2625ae7a64341ae2b5d460e13a9902f0359cd79a72d54d2fbb pmc_33670539.pdf Title: Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators Subject: The thermoelectric performance of nanostructured low dimensional silicon and silicon-germanium has been functionally compared device-wise. The arrays of nanowires of both materials, grown by a VLS-CVD (Vapor-Liquid-Solid Chemical Vapor Deposition) method, have been monolithically integrated in a silicon micromachined structure in order to exploit the improved thermoelectric properties of nanostructured silicon-based materials. The device architecture helps to translate a vertically occurring temperature gradient into a lateral temperature difference across the nanowires. Such thermocouple is completed with a thin film metal leg in a unileg configuration. The device is operative on its own and can be largely replicated (and interconnected) using standard IC (Integrated Circuits) and MEMS (Micro-ElectroMechanical Systems) technologies. Despite SiGe nanowires devices show a lower Seebeck coefficient and a higher electrical resistance, they exhibit a much better performance leading to larger open circuit voltages and a larger overall power supply. This is possible due to the lower thermal conductance of the nanostructured SiGe ensemble that enables a much larger internal temperature difference for the same external thermal gradient. Indeed, power densities in the W/cm2 could be obtained for such devices when resting on hot surfaces in the 50–200 C range under natural convection even without the presence of a heat exchanger. Keywords: Silicon nanowires; SiGe nanowires; thermoelectricity; MEMS; energy harvesting; VLS-CVD Author: Luis Fonseca, Inci Donmez-Noyan, Marc Dolcet, Denise Estrada-Wiese, Joaquin Santander, Marc Salleras, Gerard Gadea, Mercè Pacios, Jose-Manuel Sojo, Alex Morata and Albert Tarancon Creator: LaTeX with hyperref Producer: pdfTeX-1.40.21 CreationDate: Fri Feb 19 03:10:43 2021 CET ModDate: Sat Feb 20 03:55:01 2021 CET Custom Metadata: no Metadata Stream: no Tagged: no UserProperties: no Suspects: no Form: none JavaScript: no Pages: 11 Encrypted: no Page size: 595.276 x 841.89 pts (A4) Page rot: 0 File size: 17141043 bytes Optimized: no PDF version: 1.7 name type encoding emb sub uni object ID ------------------------------------ ----------------- ---------------- --- --- --- --------- MEJHZL+VnURWPalladioL Type 1 Custom yes yes no 10 0 XNSZMW+EURM10 Type 1 Builtin yes yes no 15 0 OGVXIO+URWPalladioL-Ital Type 1 Custom yes yes no 19 0 EHVAOX+URWPalladioL-Bold Type 1 Custom yes yes no 24 0 EOLHXR+URWPalladioL-Roma Type 1 Custom yes yes no 28 0 OJYQXC+CMSY10 Type 1 Builtin yes yes no 32 0 WYEKQU+VnURWPalladioL-Bold Type 1 Custom yes yes no 36 0 NPLVPL+TimesNewRomanPS-BoldItalicMT Type 1C WinAnsi yes yes no 44 0 MCBCCI+SourceSansRoman-Regular Type 1C Custom yes yes no 66 0 MCBCCM+SourceSansRoman.613wght Type 1C Custom yes yes no 70 0 MCBCCO+SourceSansRoman-Bold Type 1C Custom yes yes no 74 0 ROWTUD+PazoMath Type 1 Builtin yes yes no 100 0 Jhove (Rel. 1.28.0, 2023-05-18) Date: 2024-10-02 03:40:26 CEST RepresentationInformation: pmc_33670539.pdf ReportingModule: PDF-hul, Rel. 1.12.4 (2023-03-16) LastModified: 2023-03-31 12:05:28 CEST Size: 17141043 Format: PDF Version: 1.7 Status: Well-Formed and valid SignatureMatches: PDF-hul MIMEtype: application/pdf PDFMetadata: Objects: 296 FreeObjects: 11 IncrementalUpdates: 0 DocumentCatalog: PageLayout: SinglePage PageMode: UseNone Outlines: Item: Title: Introduction Destination: section.1 Item: Title: Materials and Methods Destination: section.2 Item: Title: Results Destination: section.3 Item: Title: Discussion Destination: section.4 Item: Title: Conclusions Destination: section.5 Item: Title: References Destination: section.5 Info: Title: Transitioning from Si to SiGe Nanowires as Thermoelectric Material in Silicon-Based Microgenerators Author: Luis Fonseca, Inci Donmez-Noyan, Marc Dolcet, Denise Estrada-Wiese, Joaquin Santander, Marc Salleras, Gerard Gadea, Mercè Pacios, Jose-Manuel Sojo, Alex Morata and Albert Tarancon Subject: The thermoelectric performance of nanostructured low dimensional silicon and silicon-germanium has been functionally compared device-wise. The arrays of nanowires of both materials, grown by a VLS-CVD (Vapor-Liquid-Solid Chemical Vapor Deposition) method, have been monolithically integrated in a silicon micromachined structure in order to exploit the improved thermoelectric properties of nanostructured silicon-based materials. The device architecture helps to translate a vertically occurring temperature gradient into a lateral temperature difference across the nanowires. Such thermocouple is completed with a thin film metal leg in a unileg configuration. The device is operative on its own and can be largely replicated (and interconnected) using standard IC (Integrated Circuits) and MEMS (Micro-ElectroMechanical Systems) technologies. Despite SiGe nanowires devices show a lower Seebeck coefficient and a higher electrical resistance, they exhibit a much better performance leading to larger open circuit voltages and a larger overall power supply. This is possible due to the lower thermal conductance of the nanostructured SiGe ensemble that enables a much larger internal temperature difference for the same external thermal gradient. Indeed, power densities in the W/cm2 could be obtained for such devices when resting on hot surfaces in the 50 200 C range under natural convection even without the presence of a heat exchanger. 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