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Title:          Modeling and simulation of successive breakdown events in thin gate dielectrics using standard reliability growth models
Subject:        Solid State Electronics, 210 (2023) 108812. doi:10.1016/j.sse.2023.108812
Keywords:       Dielectric breakdown,Oxide breakdown,MOS,MIM,Oxide reliability
Author:         E. Miranda
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       Item: 
        Title: 1 Introduction
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        Title: 2 Devices and measurements
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        Title: 3 Exploratory analysis of reliability growth models
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        Title: 4 Analysis of the power-law model
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        Title: 5 SPICE simulations of multiple BD events
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        Title: 6 Conclusions
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        Title: Declaration of Competing Interest
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        Title: Data availability
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        Title: Acknowledgements
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       Item: 
        Title: References
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