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Saludes-Tapia Subject: Solid State Electronics, 207 (2023) 108718. doi:10.1016/j.sse.2023.108718 Keywords: Breakdown voltage,Dry etching,HfO2,Memristor,Resistive switching,W electrode,Wet etching Creator: Elsevier Producer: Acrobat Distiller 8.1.0 (Windows) CreationDate: Tue Aug 08 09:08:20 CEST 2023 ModDate: Tue Aug 08 10:50:44 CEST 2023 ID: 0x3e79267a503ed96dda7c2ffbd65ec125, 0x67fd7e8db38ecb741891ecc0db1d091c Filters: FilterPipeline: FlateDecode FilterPipeline: DCTDecode Images: Image: NisoImageMetadata: FormatName: image/jpg CompressionScheme: JPEG ImageWidth: 236 ImageHeight: 298 BitsPerSample: 8 BitsPerSampleUnit: integer Image: NisoImageMetadata: FormatName: image/jpg CompressionScheme: JPEG ImageWidth: 248 ImageHeight: 271 BitsPerSample: 8 BitsPerSampleUnit: integer Fonts: Type0: Font: BaseFont: UFPFLV+CharisSIL-Bold Encoding: Identity-H ToUnicode: true Font: BaseFont: WMXBLZ+CharisSIL Encoding: Identity-H ToUnicode: true Font: BaseFont: VLUMQY+CharisSIL-Italic Encoding: Identity-H ToUnicode: true Type1: Font: BaseFont: BRWWWZ+TeX_CM_Roman FontSubset: true FirstChar: 1 LastChar: 128 FontDescriptor: FontName: BRWWWZ+TeX_CM_Roman Flags: Symbolic FontBBox: -50, -180, 1000, 720 FontFile3: true ToUnicode: true Font: BaseFont: JGILOH+STIX-Regular FontSubset: true FirstChar: 1 LastChar: 21 FontDescriptor: FontName: JGILOH+STIX-Regular Flags: Nonsymbolic FontBBox: -970, -486, 2208, 1023 FontFile3: true EncodingDictionary: BaseEncoding: WinAnsiEncoding Differences: true ToUnicode: true Font: BaseFont: SIEHIN+STIX-Italic FontSubset: true FirstChar: 1 LastChar: 19 FontDescriptor: FontName: SIEHIN+STIX-Italic Flags: Nonsymbolic, Italic FontBBox: -970, -305, 1429, 1023 FontFile3: true EncodingDictionary: BaseEncoding: WinAnsiEncoding Differences: true ToUnicode: true Font: BaseFont: GTZJPG+TeX_CM_Maths_Symbols FontSubset: true FirstChar: 1 LastChar: 138 FontDescriptor: FontName: GTZJPG+TeX_CM_Maths_Symbols Flags: Symbolic FontBBox: -50, -180, 1000, 720 FontFile3: true ToUnicode: true Font: BaseFont: LZYZZL+TeX_CM_Maths_Italic FontSubset: true FirstChar: 1 LastChar: 127 FontDescriptor: FontName: LZYZZL+TeX_CM_Maths_Italic Flags: Symbolic FontBBox: -50, -180, 1000, 720 FontFile3: true ToUnicode: true Font: BaseFont: GBNAGF+Univers FontSubset: true FirstChar: 32 LastChar: 251 FontDescriptor: FontName: GBNAGF+Univers Flags: Symbolic FontBBox: -50, -180, 1000, 720 FontFile3: true ToUnicode: true CIDFontType2: Font: BaseFont: UFPFLV+CharisSIL-Bold CIDSystemInfo: Registry: Adobe Registry: Identity Supplement: 0 FontDescriptor: FontName: UFPFLV+CharisSIL-Bold Flags: Nonsymbolic, ForceBold FontBBox: -720, -533, 1759, 1320 FontFile2: true Font: BaseFont: WMXBLZ+CharisSIL CIDSystemInfo: Registry: Adobe Registry: Identity Supplement: 0 FontDescriptor: FontName: WMXBLZ+CharisSIL Flags: Nonsymbolic FontBBox: -692, -533, 1623, 1319 FontFile2: true Font: BaseFont: VLUMQY+CharisSIL-Italic CIDSystemInfo: Registry: Adobe Registry: Identity Supplement: 0 FontDescriptor: FontName: VLUMQY+CharisSIL-Italic Flags: Nonsymbolic, Italic FontBBox: -716, -533, 1627, 1318 FontFile2: true XMP: application/pdf 10.1016/j.sse.2023.108718 Elsevier Ltd Solid State Electronics, 207 (2023) 108718. doi:10.1016/j.sse.2023.108718 Breakdown voltage Dry etching HfO2 Memristor Resistive switching W electrode Wet etching Impact of the W etching process on the resistive switching properties of TiN/Ti/HfO2/W memristors M. Saludes-Tapia F. Campabadal E. Miranda M.B. González journal Solid State Electronics © 2023 The Author(s). 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