Correlation-mediated processes for electron-induced switching between Néel States of Fe antiferromagnetic chains
Gauyacq, Jean-Pierre (Institut des Sciences Moléculaires d'Orsay (Paris, França))
Yaro Medina, Simeón Moisés (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Lorente Palacios, Nicolás (Centro de Investigación en Nanociencia y Nanotecnología)
American Physical Society

Data:	2013
Resum:	The controlled switching between two quasistable Néel states in adsorbed antiferromagnetic Fe chains has recently been achieved by Loth et al. [Science 335, 196 (2012)] using tunneling electrons from an STM tip. In order to rationalize their data, we evaluate the rate of tunneling electron-induced switching between the Néel states. Good agreement is found with the experiment, permitting us to identify three switching mechanisms: (i) low STM voltage direct electron-induced transitions, (ii) intermediate STM voltage switching via spin-wave-like excitation, and (iii) high STM voltage transitions mediated by domain-wall formation. Spin correlations in the antiferromagnetic chains are the switching driving force, leading to a marked chain-size dependence.
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; Versió publicada
Publicat a:	Physical review letters, Vol. 110, Issue 8 (February 2013) , p. 87201/1-87201/5, ISSN 1079-7114

DOI: 10.1103/PhysRevLett.110.087201

5 p, 249.4 KB

El registre apareix a les col·leccions:
Articles > Articles publicats