Hydrogen release mechanisms in the breakdown of thin SiO2 films
Suñé, Jordi, 1963-
(Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Wu, E. (IBM. Microelectronics Division (Vermont, Estats Units d'Amèrica))
American Physical Society
Data: |
2004 |
Resum: |
The mechanism of hydrogen release from the anode Si/SiO2 interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges. The presented results provide strong support to single-electron assisted Si-H bond breakage and discard multiple electron induced incoherent vibrational heating mechanisms. |
Drets: |
Tots els drets reservats. |
Llengua: |
Anglès |
Document: |
Article ; Versió publicada |
Publicat a: |
Physical review letters, Vol. 92, Issue 8 (February 2004) , p. 087601, ISSN 1079-7114 |
DOI: 10.1103/PhysRevLett.92.087601
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