Integrated tunneling sensor for nanoelectromechanical systems
Sadewasser, Sascha (Institut de Microelectrònica de Barcelona)
Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Dohn, S. (Technical University of Denmark. Department of Micro and Nanotechnology)
Boisen, A. (Technical University of Denmark. Department of Micro and Nanotechnology)
Fonseca Chácharo, Luis Antonio (Institut de Microelectrònica de Barcelona)
Esteve, Jaume (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
American Physical Society

Data:	2006
Resum:	Transducers based on quantum mechanical tunneling provide an extremely sensitive sensor principle, especially for nanoelectromechanical systems. For proper operation a gap between the electrodes of below 1nm is essential, requiring the use of structures with a mobile electrode. At such small distances, attractive van der Waals and capillary forces become sizable, possibly resulting in snap-in of the electrodes. The authors present a comprehensive analysis and evaluation of the interplay between the involved forces and identify requirements for the design of tunnelingsensors. Based on this analysis, a tunnelingsensor is fabricated by Si micromachiningtechnology and its proper operation is demonstrated.
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Tunneling ; Electrodes ; Nanoelectromechanical systems ; Microelectromechanical systems ; Electrostatics ; Image sensors ; Infrared detectors ; Micromachining ; Silicon detectors ; Van der Waals forces
Publicat a:	Applied physics letters, Vol. 89, Issue 17 (October 2006) , p. 173101/1-173101/3, ISSN 1077-3118

DOI: 10.1063/1.2362593

4 p, 332.8 KB

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