Web of Science: 22 cites, Scopus: 29 cites, Google Scholar: cites
Conductance quantization in resistive random access memory
Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
Liu, Yang (University of Science and Technology Beijing. Department of Materials Physics and Chemistry)
Hu, Chen (University of Science and Technology Beijing. Department of Materials Physics and Chemistry)
Teng, Jiao (University of Science and Technology Beijing. Department of Materials Physics and Chemistry)
Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
Suñé, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))

Data: 2015
Resum: The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. The RRAM device also exhibits rich electrical, thermal, magnetic, and optical effects, in close correlation with the abundant resistive switching (RS) materials, metal-oxide interface, and multiple RS mechanisms including the formation/rupture of nanoscale to atomic-sized conductive filament (CF) incorporated in RS layer. Conductance quantization effect has been observed in the atomic-sized CF in RRAM, which provides a good opportunity to deeply investigate the RS mechanism in mesoscopic dimension. In this review paper, the operating principles of RRAM are introduced first, followed by the summarization of the basic conductance quantization phenomenon in RRAM and the related RS mechanisms, device structures, and material system. Then, we discuss the theory and modeling of quantum transport in RRAM. Finally, we present the opportunities and challenges in quantized RRAM devices and our views on the future prospects.
Nota: Número d'acord de subvenció MICYT/TEC2012-32305
Drets: Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original. Creative Commons
Llengua: Anglès.
Document: article ; publishedVersion
Matèria: Resistive random access memory (RRAM) ; Resistive switching (RS) ; Conductive filament (CF) ; Conductance quantization
Publicat a: Nanoscale Research Letters, Vol. 10 (December 2015) , art. 420, ISSN 1931-7573

PMID: 26501832
DOI: 10.1186/s11671-015-1118-6


30 p, 3.6 MB

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