Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks
Sakai, Joe (Laboratoire GREMAN (Tours))
Bavencoffe, Maxime (Laboratoire GREMAN (Tours))
Negulescu, Beatrice (Laboratoire GREMAN (Tours))
Limelette, Patrice (Laboratoire GREMAN (Tours))
Wolfman, Jérôme (Laboratoire GREMAN (Tours))
Tateyama, Akinori (Tokyo Institute of Technology)
Funakubo, Hiroshi (Tokyo Institute of Technology)

Data:	2019
Resum:	We prepared a stacked structure consisting of a quasi-free-standing functional oxide thin film and a ceramic piezoelectric disk and observed the effect of the piezoelectric disk deformation on the resistance of the thin film. Epitaxial V₂O₃ films were grown by a pulsed laser deposition method on muscovite mica substrates, peeled off using Scotch tapes, and transferred onto piezoelectric elements. In this V₂O₃/insulator/top electrode/piezoelectronic disk/bottom electrode structure, the resistance of the V₂O₃ film displayed a variation of 60% by sweeping the piezoelectronic disk bias. With support from x-ray diffraction measurements under an electric field, a huge gauge factor of 3 × 10³ in the V₂O₃ film was inferred. The sizeable resistance change in the V₂O₃ layer is ascribed to the piezo-actuated evolution of c/a ratios, which drives the material towards an insulating phase. A memory effect on the resistance, related to the hysteretic displacement of the piezoelectric material, is also presented.
Nota:	The Joe Sakai present address is ICN2, Campus de la UAB.
Drets:	Tots els drets reservats.
Llengua:	Anglès
Document:	Article ; recerca ; Versió acceptada per publicar
Matèria:	Electrode structure ; Functional oxides ; Insulating phase ; Piezoelectric disks ; Piezoelectric elements ; Resistance change ; Stacked structure ; X-ray diffraction measurements
Publicat a:	Journal of applied physics, Vol. 125, issue 11 (March 2019) , art. 115102, ISSN 1089-7550

DOI: 10.1063/1.5083941

Postprint 15 p, 376.8 KB

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