Nanowire forest of pnictogen-chalcogenide alloys for thermoelectricity
Singhal, Dhruv (Université Grenoble Alpes)
Paterson, Jessy (Université Grenoble Alpes)
Ben-Khedim, Meriam (Technology RandD. STMicroelectronics)
Tainoff, Dimitri (Université Grenoble Alpes)
Cagnon, Laurent (Université Grenoble Alpes)
Richard, Jacques (Université Grenoble Alpes)
Chávez Ángel, Emigdio (Institut Català de Nanociència i Nanotecnologia)
Jaramillo Fernández, Juliana (Institut Català de Nanociència i Nanotecnologia)
Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
Lacroix, David (Centre National de la Recherche Scientifique (França))
Bourgault, Daniel (Université Grenoble Alpes)
Buttard, Denis (Université Grenoble Alpes)
Bourgeois, Olivier (Université Grenoble Alpes)

Fecha:	2019
Resumen:	Pnictogen and chalcogenide compounds have been seen as high-potential materials for efficient thermoelectric conversion over the past few decades. It is also known that with nanostructuration, the physical properties of these pnictogen-chalcogenide compounds can be further enhanced towards a more efficient heat conversion. Here, we report the reduced thermal conductivity of a large ensemble of BiTe alloy nanowires (70 nm in diameter) with selenium for n-type and antimony for p-type (BiTeSe and BiSbTe respectively). The nanowire growth was carried out through electrodeposition in nanoporous aluminium oxide templates with high aspect ratios leading to a forest (10 per centimetre square) of nearly identical nanowires. The temperature dependence of thermal conductivity for the nanowire ensembles was acquired through a highly sensitive 3ω measurement technique. The change in the thermal conductivity of nanowires is largely affected by the roughness in addition to the size effect due to enhanced boundary scattering. The major factor that influences the thermal conductivity was found to be the ratio of the rms roughness to the correlation length of the nanowire. With a high Seebeck coefficient and electrical conductivity at room temperature, the overall thermoelectric figure of merit ZT allows the consideration of such forests of nanowires as efficient potential building blocks of future TE devices.
Ayudas:	Ministerio de Economía y Competitividad FIS2015-70862-P Ministerio de Economía y Competitividad SEV-2017-0706
Derechos:	Tots els drets reservats.
Lengua:	Anglès
Documento:	Article ; recerca ; Versió sotmesa a revisió
Materia:	Boundary scattering ; Chalcogenide compound ; Electrical conductivity ; Measurement techniques ; Potential building blocks ; Temperature dependence ; Thermoelectric conversion ; Thermoelectric figure of merit
Publicado en:	Nanoscale, Vol. 11, Issue 28 (July 2019) , p. 13423-13430, ISSN 2040-3372

DOI: 10.1039/c9nr01566c
PMID: 31281906

Preprint 20 p, 7.8 MB

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Documentos de investigación > Documentos de los grupos de investigación de la UAB > Centros y grupos de investigación (producción científica) > Ciencias > Institut Català de Nanociència i Nanotecnologia (ICN2)
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