Home > Articles > Published articles > Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating > Comments
 
 
Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with reduced self heating - Russell, Stephen (University of Warwick. School of Engineering) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; McConville, Christopher F. (RMIT University. College of Science, Engineering and Health) ; Fisher, Craig (University of Warwick. School of Engineering) ; Hamilton, Dean P. (University of Warwick. School of Engineering) ; Mawby, Philip A. (University of Warwick. School of Engineering) ; Jennings, Mike (University of Warwick. School of Engineering)
 
Comments (0) | Reviews (0)
Start a discussion about any aspect of this document.

 Subscribe to this discussion. You will then receive all new comments by email.

Add comment


Once logged in, authorized users can also attach files.
Note: you have not defined your nickname.
N/D will be displayed as the author of this comment.
          You can use some HTML tags: <a href>, <strong>, <blockquote>, <br />, <p>, <em>, <ul>, <li>, <b>, <i>

Similar records

UAB Digital Repository of Documents :: Search :: Submit :: Personalize :: Help
Powered by Invenio v1.1.6
Maintained by ddd.bib@uab.cat  :: Metadata license:
Working with