Competition between Carrier Injection and Structural Distortions in Electron-Doped Perovskite Nickelate Thin Films
Hadjimichael, Marios (University of Geneva. Department of Quantum Matter Physics)
Mundet, Bernat (École Polytechnique Fédérale de Lausanne)
Domínguez, Claribel (University of Geneva. Department of Quantum Matter Physics)
Waelchli, Adrien (University of Geneva. Department of Quantum Matter Physics)
De Luca, Gabriele (Institut Català de Nanociència i Nanotecnologia)
Spring, Jonathan (University of Zurich. Department of Physics)
Jöhr, Simon (University of Zurich. Department of Physics)
McKeown Walker, Siobhan (University of Geneva. Department of Quantum Matter Physics)
Piamonteze, Cinthia (Paul Scherrer Institut (Suïssa))
Alexander, Duncan T. L. (École Polytechnique Fédérale de Lausanne)
Triscone, Jean-Marc (University of Geneva. Department of Quantum Matter Physics)
Gibert, Marta (Solid State Physics Institute. TU Wien)

Data:	2023
Resum:	The discovery of superconductivity in doped infinite-layer nickelate thin films has brought increased attention to the behavior of the doped perovskite phase. Despite this interest, the majority of existing studies pertain to hole-doped perovskite rare-earth nickelate thin films, while most electron-doping studies have been performed on bulk materials so far. To tackle this imbalance, a detailed study that addresses doping of NdNiO thin films using A-site substitution is presented, using Pb as a dopant and taking advantage of its valence-skipping nature. Through a combination of complementary techniques including X-ray diffraction, transport measurements, X-ray absorption spectroscopy, electron energy-loss spectroscopy and scanning transmission electron microscopy, the valence of Pb in the NdPbNiO structure is confirmed to be 4+, and the behavior of the doped thin films is found to be controlled by a competition between carrier injection and structural distortions, which respectively reduce and increase the metal-to-insulator transition temperature. This work provides a systematic study of electron doping in NdNiO, demonstrating that A-site substitution with Pb is an appropriate method for such doping in perovskite rare-earth nickelate systems.
Ajuts:	European Commission 319286
Drets:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Publicat a:	Advanced Electronic Materials, Vol. 9, Issue 5 (May 2023) , art. 2201182, ISSN 2199-160X

DOI: 10.1002/aelm.202201182

12 p, 2.8 MB

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