A Simple, Robust, and Versatile MATLAB Formulation of the Dynamic Memdiode Model for Bipolar-Type Resistive Random Access Memory Devices
Salvador Aguilera, Emili (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Rodriguez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)

Data:	2024
Resum:	Modeling in an emerging technology like RRAM devices is one of the pivotal concerns for its development. In the current bibliography, most of the models face difficulties in implementing or simulating unconventional scenarios, particularly when dealing with complex input signals. In addition, circuit simulators like Spice require long running times for high-resolution results because of their internal mathematical implementation. In this work, a fast, simple, robust, and versatile model for RRAM devices built in MATLAB is presented. The proposed model is a recursive and discretized version of the dynamic memdiode model (DMM) for bipolar-type resistive switching devices originally implemented in LTspice. The DMM model basically consists of two coupled equations: one for the current (non-linear current generator) and a second one for the memory state of the device (time-dependent differential equation). This work presents an easy-to-use tool for researchers to reproduce the experimental behavior of their devices and predict the outcome from non-trivial experiments. Three study cases are reported, aimed at capturing different phenomenologies: a frequency effect study, a cycle-to-cycle variability fit, and a stochastic resonance impact analysis.
Ajuts:	Agencia Estatal de Investigación PID2019-103869RB-C32 Agencia Estatal de Investigación PID2022-139586NB-C41 Agència de Gestió d'Ajuts Universitaris i de Recerca 2020/FISDU-00261
Drets:	Aquest document està subjecte a una llicència d'ús Creative Commons. Es permet la reproducció total o parcial, la distribució, la comunicació pública de l'obra i la creació d'obres derivades, fins i tot amb finalitats comercials, sempre i quan es reconegui l'autoria de l'obra original.
Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	RRAM ; Memristor ; MATLAB ; Stochastic resonance ; Variability
Publicat a:	Journal of low power electronics and applications, Vol. 14, Issue 2 (May 2024) , art. 30, ISSN 2079-9268

DOI: 10.3390/jlpea14020030

11 p, 4.0 MB

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