Flexophotovoltaic Effect and Above-Band-Gap Photovoltage Induced by Strain Gradients in Halide Perovskites

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(Nanchang University)
Shu, Shengwen (Fuzhou University)
Wei, Xiaoyong (Xi'An Jiao Tong University)
Liang, Renhong (Nanchang University)
Ke, Shanming

(Nanchang University)
Shu, Longlong

(Nanchang University)
Catalan, Gustau

(Institut Català de Nanociència i Nanotecnologia)

Data:	2024
Resum:	We have measured the flexophotovoltaic effect of single crystals of halide perovskites MAPbBr3 and MAPbI3, as well as the benchmark oxide perovskite SrTiO3. For halide perovskites, the flexophotovoltaic effect is found to be orders of magnitude larger than for SrTiO3, and indeed large enough to induce photovoltages bigger than the band gap. Moreover, we find that in MAPbI3 the flexophotovoltaic effect is additional to a native bulk photovoltaic response that is switchable and ferroelectric-like. The results suggest that strain gradient engineering can be a powerful tool to modify the photovoltaic output even in already well-established photovoltaic materials.
Ajuts:	Agencia Estatal de Investigación PID2019-108573-GB-C21 Agencia Estatal de Investigación CEX2021-001214-S Agencia Estatal de Investigación PRX22/00595
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Llengua:	Anglès
Document:	Article ; recerca ; Versió publicada
Matèria:	Halide perovskites ; Orders of magnitude ; Oxide perovskite ; Photo-voltage ; Photovoltaic materials ; Photovoltaic response ; Photovoltaics ; Strain gradients ; Switchable
Publicat a:	Physical review letters, Vol. 132, Issue 8 (February 2024) , art. 86902, ISSN 1079-7114

7 p, 2.0 MB

Registre creat el 2025-02-11, darrera modificació el 2025-06-18