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Cerca | Lliura | Ajuda | Servei de Biblioteques | Sobre el DDD | Català English Español | |||||||||
| Pàgina inicial > Articles > Articles publicats > The gate tunable 2D pn junction driven out-of-equilibrium |
| Data: | 2021 |
| Resum: | We have investigated the electrostatics and electronic transport of the gate tunable 2D pn junction by implementing a comprehensive physics-based simulator that self-consistently solves the 2D Poisson's equation coupled to the drift-diffusion current and continuity equations. The simulator considers the strong influence of the out-of-plane electric field through the gate dielectric and the presence of interface states. The impact of parameters such as gate capacitance, energy gap, and interface trap states density have been considered to model properties such as the depletion width, rectification factor, and depletion and diffusion capacitances. The present work opens the door to a wider exploration of potential advantages that gate tunable 2D pn junctions could bring in terms of figures of merit. |
| Ajuts: | European Commission 785219 European Commission 881603 Agencia Estatal de Investigación RTI2018-097876-B-C21 Ministerio de Economía y Competitividad TEC2015-67462-C2-1-R |
| Nota: | Altres ajuts: GraphCAT project reference 001-P-001702. |
| Nota: | This AIP article is published under license by AIP: https://publishing.aip.org/wp-content/uploads/2019/10/AIPP-Author-License.pdf |
| Drets: | Aquest material està protegit per drets d'autor i/o drets afins. Podeu utilitzar aquest material en funció del que permet la legislació de drets d'autor i drets afins d'aplicació al vostre cas. Per a d'altres usos heu d'obtenir permís del(s) titular(s) de drets. |
| Llengua: | Anglès |
| Document: | Article ; recerca ; Versió publicada |
| Matèria: | Electronic transport ; Diffusion current ; P-N junctions ; Electrostatics ; Partial differential equations |
| Publicat a: | Journal of applied physics, Vol. 130, issue 17 (November 2021) , art. 174505, ISSN 1089-7550 |
11 p, 2.5 MB |