Articles

Articles 31 registres trobats  inicianterior22 - 31  anar al registre: La cerca s'ha fet en 0.02 segons. 
22.
18 p, 11.9 MB High surface area graphene foams by chemical vapor deposition / Drieschner, Simon (Technische Universität München. Physik-Department) ; Weber, Michael (Technische Universität München. Physik-Department) ; Wohlketzetter, Jörg (Technische Universität München. Physik-Department) ; Vieten, Josua (Technische Universität München. Physik-Department) ; Makrygiannis, Evangelos (Technische Universität München. Physik-Department) ; Blaschke, Benno M. (Technische Universität München. Physik-Department) ; Morandi, Vittorio (Consiglio Nazionale delle Ricerche. Istituto per la microelettronica e microsistemi) ; Colombo, Luigi (Texas Instruments. Analog Technology Development) ; Bonaccorso, Francesco (Istituto Italiano di Tecnologia. Graphene Labs) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia)
Three-dimensional (3D) graphene-based structures combine the unique physical properties of graphene with the opportunity to get high electrochemically available surface area per unit of geometric surface area. [...]
2016 - 10.1088/2053-1583/3/4/045013
2D Materials, Vol. 3, no. 4 (October 2016) , art. 045013  
23.
31 p, 2.0 MB Flexible Graphene Solution-Gated Field-Effect Transistors : Efficient Transducers for Micro-Electrocorticography / Hébert, Clement (Institut Català de Nanociència i Nanotecnologia) ; Masvidal-Codina, Eduard (Institut Català de Nanociència i Nanotecnologia) ; Suarez-Pérez, Alejandro (Institut d'Investigacions Biomèdiques August Pi i Sunyer (IDIBAPS)) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Piret, Gaelle (INSERM U1205 (Grenoble, França)) ; Garcia-Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ; Illa Vila, Xavier (Institut de Microelectrònica de Barcelona) ; Del Corro Garcia, Elena (Institut Català de Nanociència i Nanotecnologia) ; De la Cruz Sanchez, José M. (Institut Català de Nanociència i Nanotecnologia) ; Viana Casals, Damià (Institut Català de Nanociència i Nanotecnologia) ; Prats-Alfonso, Elisabet (Institut de Microelectrònica de Barcelona) ; Bousquet, Jessica (Institut Català de Nanociència i Nanotecnologia) ; Godignon, Philippe (Institut de Microelectrònica de Barcelona) ; Yvert, Blayse (INSERM U1205 (Grenoble, França)) ; Villa Sanz, Rosa (Institut de Microelectrònica de Barcelona) ; Sanchez-Vives, Maria V. (Institut d'Investigacions Biomèdiques August Pi i Sunyer (IDIBAPS)) ; Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia)
Brain–computer interfaces and neural prostheses based on the detection of electrocorticography (ECoG) signals are rapidly growing fields of research. Several technologies are currently competing to be the first to reach the market; however, none of them fulfill yet all the requirements of the ideal interface with neurons. [...]
2018 - 10.1002/adfm.201703976
Advanced Functional Materials, Vol. 28, Núm. 12 (March 2018) , article 1703976  
24.
6 p, 3.1 MB Scaling properties of charge transport in polycrystalline graphene / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Kotakoski, Jani (Universität Wien. Faculty of Physics) ; Louvet, Thibaud (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Meyer, Jannik C. (Universität Wien. Faculty of Physics) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Polycrystalline graphene is a patchwork of coalescing graphene grains of varying lattice orientations and size, resulting from the chemical vapor deposition (CVD) growth at random nucleation sites on metallic substrates. [...]
2013 - 10.1021/nl400321r
Nano letters, Vol. 13, issue 4 (April 2013) , p. 1730-1735  
25.
7 p, 2.4 MB The role of the Fermi level pinning in gate tunable graphene-semiconductor junctions / Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the modulation of the graphene-semiconductor (GS) Schottky barrier by means of a top gate, and demonstrating an ON-OFF current ratio up to 10⁵. [...]
2016 - 10.1109/TED.2016.2606139
IEEE transactions on electron devices, Vol. 63, no. 11 (Nov. 2016) , p. 4521-4526  
26.
33 p, 1.1 MB Short channel effects in graphene-based field effect transistors targeting radio-frequency applications / Feijoo, Pedro C (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although twodimensional (2D) materials provide a superior immunity to short channel effects (SCEs) than bulk materials, they could dominate in scaled GFETs. [...]
2016
2D Materials, Vol. 3, no. 2 (June 2016) , p. 1-13  
27.
7 p, 921.0 KB Large-signal model of graphene field-effect transistors. Part II : circuit performance benchmarking / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. [...]
2016 - 10.1109/TED.2016.2563464
IEEE Transactions on electron devices, Vol. 63, Issue 7 (July 2016) , p. 2942 - 2947  
28.
6 p, 1.8 MB Large-signal model of graphene field-effect transistors. Part I : compact modeling of GFET intrinsic capacitances / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a tool for simulating the electrical behavior of graphene-based integrated circuits, dealing with the DC, transient behavior, and frequency response of the circuit. [...]
2016 - 10.1109/TED.2016.2570426
IEEE Transactions on Electron Devices, Vol. 63 Issue 7 (July 2016) , p. 2936 - 2941  
29.
4 p, 611.3 KB Current-induced cleaning of graphene / Moser, Joel (Centre d'Investigació en Nanociència i Nanotecnologia (CIN2)) ; Barreiro Megino, Amelia (Centre d'Investigació en Nanociència i Nanotecnologia (CIN2)) ; Bachtold, Adrian (Centre d'Investigació en Nanociència i Nanotecnologia (CIN2)) ; American Physical Society
A simple yet highly reproducible method to suppress contamination of graphene at low temperature inside the cryostat is presented. The method consists of applying a current of several milliamperes through the graphene device, which is here typically a few microns wide. [...]
2007 - 10.1063/1.2789673
Applied Physics Letters, Vol. 91, Issue 16 (October 2007) , p. 163513/1-163513/3  
30.
4 p, 554.7 KB The environment of graphene probed by electrostatic force microscopy / Moser, Joel (Institut Català de Nanotecnologia) ; Verdaguer, A. (Institut Català de Nanotecnologia) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Barreiro Megino, Amelia (Institut Català de Nanotecnologia) ; Bachtold, Adrian (Institut Català de Nanotecnologia) ; American Physical Society
We employ electrostatic force microscopy to study the electrostatic environment of graphene sheets prepared with the micromechanical exfoliation technique. We detect the electric dipole of residues left from the adhesive tape during graphene preparation, as well as the dipole of water molecules adsorbed on top of graphene. [...]
2008 - 10.1063/1.2898501
Applied Physics Letters, Vol. 92, Issue 12 (March 2008) , p. 123507/1-123507/3  
31.
5 p, 1.7 MB Impact of graphene polycrystallinity on the performance of graphene field-effect transistors / Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cummings, Aron W. (Institut Català de Nanociencia i Nanotecnologia) ; Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Kotakoski, Jani (University of Vienna. Faculty of Physics) ; Roche, Stephan (Institució Catalana de Recerca i Estudis Avançats) ; American Institute of Physics
We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. [...]
2014 - 10.1063/1.4863842
Applied Physics Letters, Vol. 104, Issue 4 (January 2014) , p. 043509/1-043509/4  

Articles : 31 registres trobats   inicianterior22 - 31  anar al registre:
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