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Articles	13 registres trobats 11 - 13 anar al registre:	La cerca s'ha fet en 0.01 segons.

11.

4 p, 345.8 KB

Electrical characterization of the soft breakdown failure mode in MgO layers / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; O'Connor, Eamon (University College Cork. Tyndall National Institute) ; Hughes, Greg (Dublin City University. School of Physical Sciences) ; Casey, Patrick (Dublin City University. School of Physical Sciences) ; Cherkaoui, Karim (University College Cork. Tyndall National Institute) ; Monaghan, S. (University College Cork. Tyndall National Institute) ; Long, R. (University College Cork. Tyndall National Institute) ; O'Connell, Deborah (University College Cork. Tyndall National Institute) ; Hurley, Paul K. (University College Cork. Tyndall National Institute) ; American Physical Society
The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. [...]
2009 - DOI (Digital Object Identifier)

10.1063/1.3167827
Applied physics letters, Vol. 95, Issue 1 (July 2009) , p. 012901/1-012901/3

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12.

4 p, 1.2 MB

Correlation between the nanoscale electrical and morphological properties of crystallized hafnium oxide-based metal oxide semiconductor structures / Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Dudek, P. (Innovations for High Performance Microelectronics (Frankfurt, Alemanya)) ; Schroeder, T. (Innovations for High Performance Microelectronics (Frankfurt, Alemanya)) ; Bersuker, G. (SEMATECH (Austin, Estats Units d'Amèrica)) ; American Physical Society
The relationship between electrical and structuralcharacteristics of polycrystalline HfO2films has been investigated by conductive atomic force microscopy under ultrahigh vacuum conditions. The results demonstrate that highly conductive and breakdown (BD) sites are concentrated mainly at the grain boundaries (GBs). [...]
2010 - DOI (Digital Object Identifier)

10.1063/1.3533257
Applied physics letters, Vol. 97, Issue 26 (December 2010) , p. 262906/1-262906/3

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13.

4 p, 302.1 KB

Progressive breakdown dynamics and entropy production in ultrathin SiO2 gate oxides / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
The progressive breakdown of ultrathin (≈2nm) SiO2 gate oxides subjected to constant electrical stress is investigated using a simple equivalent circuit model. It is shown how the interplay among series, parallel, and filamentary conductances that represent the breakdown path and its surroundings leads under certain hypothesis to a sigmoidal current-time characteristic compatible with the experimental observations. [...]
2011 - DOI (Digital Object Identifier)

10.1063/1.3602318
Applied physics letters, Vol. 98, Issue 25 (June 2011) , p. 253504/1-253504/3

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