Articles

Articles 19 registres trobats  anterior11 - 19  anar al registre: La cerca s'ha fet en 0.00 segons. 
11.
12 p, 8.4 MB Investigation of magneto-structural phase transition in FeRh by reflectivity and transmittance measurements in visible and near-infrared spectral region / Saidl, V. (Univerzita Karlova (Praga, República Txeca)) ; Brajer, M. (Univerzita Karlova (Praga, República Txeca)) ; Horák, L. (Univerzita Karlova (Praga, República Txeca)) ; Reichlová, H. (Akademie věd České republiky) ; Výborný, K. (Akademie věd České republiky) ; Veis, M. (Univerzita Karlova (Praga, República Txeca)) ; Janda, T. (Univerzita Karlova (Praga, República Txeca)) ; Trojánek, F. (Univerzita Karlova (Praga, República Txeca)) ; Maryško, M. (Akademie věd České republiky) ; Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Jungwirth, Tomas (The University of Nottingham) ; Němec, P. (Univerzita Karlova (Praga, República Txeca))
Magneto-structural phase transition in FeRh epitaxial layers was studied optically. It is shown that the transition between the low-temperature antiferromagnetic phase and the high-temperature ferromagnetic phase is accompanied by a rather large change of the optical response in the visible and near-infrared spectral ranges. [...]
2016 - 10.1088/1367-2630/18/8/083017
New journal of physics, Vol. 18 (August 2016) , art. 083017  
12.
7 p, 721.1 KB In-plane tunnelling field-effect transistor integrated on Silicon / Fina, Ignasi (Institut Català de Nanociència i Nanotecnologia) ; Apachitei, Geanina (University of Warwick. Department of Physics) ; Preziosi, Daniele (Max Planck Institute of Microstructure Physics) ; Deniz, Hakan (Max Planck Institute of Microstructure Physics) ; Kriegner, Dominik (Charles University. Department of Condensed Matter Physics) ; Martí Rovirosa, Xavier (Institute of Physics) ; Alexe, Marin (University of Warwick. Department of Physics)
Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. [...]
2015 - 10.1038/srep14367
Scientific reports, Vol. 5 (September 2015) , art. 14367  
13.
8 p, 695.2 KB Prospect for antiferromagnetic spintronics / Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Fina, Ignasi (University of Warwick. Department of Physics) ; Jungwirth, Tomas (Fyzikální ústav AV ČR)
Exploiting both spin and charge of the electron in electronic micordevices has lead to a tremendous progress in both basic condensed-matter research and microelectronic applications, resulting in the modern field of spintronics. [...]
2015 - 10.1109/TMAG.2014.2358939
IEEE transactions on magnetics, Vol. 51, issue 4 (April 2015) , art. 7109970  
14.
7 p, 5.9 MB Hidden magnetic states emergent under electric field, in a room temperature composite magnetoelectric multiferroic / Clarkson, J. D. (University of California (Berkeley). Department of Materials Science and Engineering) ; Fina, Ignasi (Institut de Ciència de Materials de Barcelona) ; Liu, Z. Q. (University of California (Berkeley). Department of Materials Science and Engineering) ; Lee, Y. (University of California (Berkeley). Department of Materials Science and Engineering) ; Kim, J. (California State University. Department of Physics) ; Frontera, Carlos (Institut de Ciència de Materials de Barcelona) ; Cordero Edwards, Rohini Kumara (Institut Català de Nanociència i Nanotecnologia) ; Wisotzki, S. (Max Planck Institute of Microstructure Physics) ; Sáncherz, F. (Institut de Ciència de Materials de Barcelona) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ; Hsu, S. L. (University of California (Berkeley). Department of Materials Science and Engineering) ; Ko, C. (University of California (Berkeley). Department of Materials Science and Engineering) ; Aballe, Lucía (ALBA Laboratori de Llum de Sincrotró) ; Foerster, Michael (ALBA Laboratori de Llum de Sincrotró) ; Wu, J. (University of California (Berkeley). Department of Materials Science and Engineering) ; Christen, H. M. (Oak Ridge National Laboratory. Center for Nanophase Materials Sciences) ; Heron, J. T. (Cornell University. Department of Materials Science and Engineering) ; Schlom, Darrell G (Cornell University. Department of Materials Science and Engineering) ; Salahuddin, S. (University of California (Berkeley). Department of Electrical Engineering and Computer Science) ; Kioussis, N. (California State University. Department of Physics) ; Fontcuberta, Josep (Institut de Ciència de Materials de Barcelona) ; Martí, X. (University of California (Berkeley). Department of Materials Science and Engineering) ; Ramesh, Ramamoorthy (University of California (Berkeley). Department of Materials Science and Engineering)
The ability to control a magnetic phase with an electric field is of great current interest for a variety of low power electronics in which the magnetic state is used either for information storage or logic operations. [...]
2017 - 10.1038/s41598-017-13760-y
Scientific reports, Vol. 7 (2017) , art. 15460  
15.
21 p, 2.1 MB Electric-field adjustable time-dependent magnetoelectric response in martensitic FeRh alloy / Fina, Ignasi (Institut de Ciència de Materials de Barcelona) ; Quintana Puebla, Alberto (Universitat Autònoma de Barcelona. Departament de Física) ; Padilla-Pantoja, Jessica (Institut Català de Nanociència i Nanotecnologia) ; Martí Rovirosa, Xavier (Fyzikální ústav AV ČR) ; Macià, Ferran (Institut de Ciència de Materials de Barcelona) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Foerster, Michael (ALBA Laboratori de Llum de Sincrotró) ; Aballe, Lucía (ALBA Laboratori de Llum de Sincrotró) ; Fontcuberta, Josep (Institut de Ciència de Materials de Barcelona) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Steady or dynamic magnetoelectric response, selectable and adjustable by only varying the amplitude of the applied electric field, is found in a multiferroic FeRh/PMN-PT device. In-operando time-dependent structural, ferroelectric, and magnetoelectric characterizations provide evidence that, as in magnetic shape memory martensitic alloys, the observed distinctive magnetoelectric responses are related to the time-dependent relative abundance of antiferromagnetic-ferromagnetic phases in FeRh, unbalanced by voltage-controlled strain. [...]
2017 - 10.1021/acsami.7b00476
ACS applied materials & interfaces, Vol. 9, issue 18 (May 2017) , p.15577−15582  
16.
3 p, 574.4 KB Modular la dependència temporal de la resposta magnetoelèctrica / Fina, Ignasi (Institut de Ciència de Materials de Barcelona) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Una recerca conjunta entre la UAB, l'ICMAB, l'ICN2 i el sincrotró ALBA ha revelat que, sota certes condicions, és possible manipular la imantació de manera molt efectiva tot utilitzant el camp elèctric, en estructures que combinen materials magnètics i piezoelèctrics. [...]
Una investigación conjunta entre la UAB, el ICMAB, el ICN2 y el sincrotrón ALB revelado que, bajo ciertas condiciones, es posible manipular la imantación manera muy efectiva utilizando el campo eléctrico, en estructuras que combi materiales magnéticos y piezoeléctricos. [...]
A joint research conducted by the UAB, ICMAB, ICN2 and ALBA Light Synchro reveals the possibility, under certain conditions, to manipulate magnetization i very effective manner through electric fields in structures combining magnetic piezoelectric materials. [...]

2017
UAB divulga, Maig 2017, p. 1-3
3 documents
17.
4 p, 484.5 KB Strain tuned magnetoelectric coupling in orthorhombic YMnO3 thin films / Martí Rovirosa, Xavier (Institut de Ciència de Materials de Barcelona) ; Fina, Ignasi (Institut de Ciència de Materials de Barcelona) ; Skumryev, Vassil (Universitat Autònoma de Barcelona. Departament de Física) ; Ferrater Martorell, Cèsar (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Varela Fernández, Manuel, 1956- (Universitat de Barcelona. Departament de Física Aplicada i Òptica) ; Fábrega Sánchez, Lourdes (Institut de Ciència de Materials de Barcelona) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Fontcuberta, Josep (Institut de Ciència de Materials de Barcelona)
Orthorhombic YMnO3epitaxialthin films were grown on Nb(0. 5%)-doped SrTiO3(001) substrates. Film's thickness was varied to tune the epitaxial strain. Structural and magnetic properties are well correlated, presenting a more pronounced ferromagnetic behavior as the unit cell becomes more distorted. [...]
2009 - 10.1063/1.3238287
Applied physics letters, Vol. 95, Issue 14 (October 2009) , p. 142903/1-142903/3  
18.
5 p, 591.3 KB Storing magnetic information in IrMn/MgO/Ta tunnel junctions via field-cooling / Petti, D. (Politecnico di Milano. Dipartimento di Fisica) ; Albisetti, E. (Politecnico di Milano. Dipartimento di Fisica) ; Reichlová, H. (Institute of Physics (Praga, República Txeca)) ; Gázquez Alabart, Jaume (Institut de Ciència de Materials de Barcelona) ; Varela, M. (Oak Ridge National Laboratory. Materials Science & Technology Division) ; Molina Ruiz, Manel (Universitat Autònoma de Barcelona. Departament de Física) ; Lopeandía Fernández, Aitor (Universitat Autònoma de Barcelona. Departament de Física) ; Olejník, K. (Institute of Physics (Praga, República Txeca)) ; Novák, V. (Institute of Physics (Praga, República Txeca)) ; Fina, Ignasi (Institut de Ciència de Materials de Barcelona) ; Dkhil, B. (Laboratoire Structures, Propriétés et Modélisation des Solides (CNRS)) ; Hayakawa, J. (Hitachi Ltd. Advanced Research Laboratory) ; Marti, X. (Institute of Physics (Praga, República Txeca)) ; Wunderlich, J. (Institute of Physics (Praga, República Txeca)) ; Jungwirth, Tomas (Institute of Physics (Praga, República Txeca)) ; Bertacco, Riccardo (Politecnico di Milano. Dipartimento di Fisica) ; American Institute of Physics
In this paper, we demonstrate that in Ta/MgO/IrMn tunneling junctions, containing no ferromagnetic elements, distinct metastable resistance states can be set by field cooling the devices from above the Néel temperature (TN) along different orientations. [...]
2013 - 10.1063/1.4804429
Applied physics letters, Vol. 102, Issue 19 (May 2013) , p. 192404/1-192404-4  
19.
4 p, 421.2 KB Magnetization reversal by electric-field decoupling of magnetic and ferroelectric domain walls in multiferroic-based heterostructures / Skumryev, Vassil (Universitat Autònoma de Barcelona. Departament de Física) ; Laukhin, Vladimir (Institut de Ciència de Materials de Barcelona) ; Fina, Ignasi (Institut de Ciència de Materials de Barcelona) ; Martí Rovirosa, Xavier (Institut de Ciència de Materials de Barcelona) ; Sánchez Barrera, Florencio (Institut de Ciència de Materials de Barcelona) ; Gospodinov, M. (Institut po fizika na tvŭrdoto ti︠a︡lo (Bŭlgarska akademii︠a︡ na naukite)) ; Fontcuberta, Josep (Institut de Ciència de Materials de Barcelona) ; American Physical Society
We demonstrate that the magnetization of a ferromagnet in contact with an antiferromagnetic multi-ferroic(LuMnO3)can be speedily reversed by electric-field pulsing, and the sign of the magnetic exchange bias can switch and recover isothermally. [...]
2011 - 10.1103/PhysRevLett.106.057206
Physical review letters, Vol. 106, Issue 5 (Feb. 2011) , p. 057206/1-057206/4  

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