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Articles 26 registres trobats  anterior11 - 20següent  anar al registre: La cerca s'ha fet en 0.01 segons. 
11.
17 p, 2.0 MB Thermal boundary resistance in semiconductors by non-equilibrium thermodynamics / Dettori, Riccardo (University of Cagliari. Department of Physics) ; Melis, Claudio (University of Cagliari. Department of Physics) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia)
We critically address the problem of predicting the thermal boundary resistance at the interface between two semiconductors by atomistic simulations. After reviewing the available models, lattice dynamics calculations and molecular dynamics simulation protocols, we reformulate this problem in the language of non-equilibrium thermodynamics, providing an elegant, robust and valuable theoretical framework for the direct calculation of the thermal boundary resistance through molecular dynamics simulations. [...]
2016 - 10.1080/23746149.2016.1175317
Advances in Physics: X, Vol. 1, Issue 2 (May 2016) , p. 246-261  
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12.
8 p, 743.4 KB Ptsi clustering in silicon probed by transport spectroscopy / Mongillo, Massimo (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Spathis, Panayotis (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Katsaros, Georgios (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; De Franceschi, Silvano (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Gentile, Pascal (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. [...]
2014 - 10.1103/PhysRevX.3.041025
Physical Review, Vol. 3, issue. 4 (Dec. 2014) , art. e041025  
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13.
7 p, 4.4 MB NH₃ molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations / Miranda, Álvaro (Institut de Ciència de Materials de Barcelona) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
The possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). [...]
2012 - 10.1186/1556-276X-7-308
Nanoscale Research Letters, Vol. 7 (June 2012) , art. 308  
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14.
18 p, 3.0 MB Thermal transport in porous Si nanowires from approach-to-equilibrium molecular dynamics calculations / Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Dettori, Riccardo (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Melis, Claudio (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Colombo, Luciano (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
We study thermal transport in porous Si nanowires (SiNWs) by means of approach-to-equilibrium molecular dynamics simulations. We show that the presence of pores greatly reduces the thermal conductivity, κ, of the SiNWs as long mean free path phonons are suppressed. [...]
2016 - 10.1063/1.4955038
Applied physics letters, Vol. 109, Issue 1 (Jul. 2016) , p. 131071-131074  
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15.
4 p, 327.5 KB Theoretical evidence for the kick-out mechanism for B diffusion in SiC / Rurali, Riccardo (Centro Nacional de Microelectrónica) ; Godignon, Philippe (Centro Nacional de Microelectrónica) ; Rebollo Palacios, José Andrés (Centro Nacional de Microelectrónica) ; Ordejon, Pablo (Institut de Ciència de Materials de Barcelona) ; Hernández, Eduardo R. (Institut de Ciència de Materials de Barcelona) ; American Physical Society
In this letter, we analyze by means of first-principles electronic structure calculations the diffusion of B impurities in 3C-SiC. We find, through molecular dynamics, that substitutional B at a Si lattice site is readily displaced by a nearby Si interstitial by the process known as a kick-out mechanism, in agreement with recent experimental results. [...]
2002 - 10.1063/1.1515369
Applied physics letters, Vol. 81, Issue 16 (October 2002) , p. 2989-2991  
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16.
4 p, 272.4 KB First-principles study of n-type dopants and their clustering in SiC / Rurali, Riccardo (Centro Nacional de Microelectrónica) ; Godignon, Philippe (Centro Nacional de Microelectrónica) ; Rebollo Palacios, José Andrés (Centro Nacional de Microelectrónica) ; Hernández, Eduardo R. (Institut de Ciència de Materials de Barcelona) ; Ordejon, Pablo (Institut de Ciència de Materials de Barcelona) ; American Physical Society
We report the results of an ab initio study of N and P dopants in SiC. We find that while N substitutes most favorably at a C lattice site, P does so preferably at a Si site, except in n-doping and Si-rich 3C-SiC. [...]
2003 - 10.1063/1.1583870
Applied physics letters, Vol. 82, Issue 24 (June 2003) , p. 4298-4300  
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17.
4 p, 563.1 KB Ordered arrays of quantum wires through hole patterning : ab initio and empirical electronic structure calculations / Rurali, Riccardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We propose an approach to the fabrication of one-dimensional nanostructures, based on the design of a pattern of channels onto a semiconductor surface. The feasibility of this approach is demonstrated by means of ab initio and empirical electronic structure calculations. [...]
2007 - 10.1063/1.2696774
Applied physics letters, Vol. 90, Issue 8 (February 2007) , p. 083118/1-083118/3  
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18.
5 p, 1.3 MB Inducing bistability with local electret technology in a microcantilever based non-linear vibration energy harvester / López Suárez, Miquel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Agustí Batlle, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Torres, Francesc 1948- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Institute of Physics
A micro-electro-mechanical system based vibration energy harvester is studied exploring the benefits of bistable non linear dynamics in terms of energy conversion. An electrostatic based approach to achieve bistability, which consists in the repulsive interaction between two electrets locally charged in both tip free ends of an atomic force microscope cantilever and a counter electrode, is experimentally demonstrated. [...]
2013 - 10.1063/1.4800926
Applied physics letters, Vol. 102, Issue 15 (April 2013) , p. 153901/1-153901/4  
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19.
1 p, 98.6 KB Comment on "Molecular Distortions and Chemical Bonding of a Large π-Conjugated Molecule on a Metal Surface" / Rurali, Riccardo (Université Paul Sabatier. Laboratoire Collisions Agrégats, Réactivité) ; Lorente, N. (Université Paul Sabatier. Laboratoire Collisions Agrégats, Réactivité) ; Ordejon, Pablo (Institut de Ciència de Materials de Barcelona) ; American Physical Society
2005 - 10.1103/PhysRevLett.95.209601
Physical review letters, Vol. 95, Issue 20 (November 2005) , p. 209601-1  
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20.
5 p, 1.1 MB Quantum size effects in hafnium-oxide resistive switching / Long, Shibing (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lian, Xiaojuan (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cagli, Carlo (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Perniola, Luca (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Liu, Ming (Chinese Academy of Sciences. Laboratory of Nanofabrication and Novel Device Integration (Beijing, Xina)) ; American Physical Society
Discrete changes of conductance of the order of G0 = 2e2/h reported during the unipolar reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. [...]
2013 - 10.1063/1.4802265
Applied physics letters, Vol. 102, Issue 18 (May 2013) , p. 183505/1-183505/4  
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Articles : 26 registres trobats   anterior11 - 20següent  anar al registre:
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1 Rurali, R.
2 Rurali, Riccardo,
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