Articles

Articles 39 registres trobats  inicianterior14 - 23següentfinal  anar al registre: La cerca s'ha fet en 0.01 segons. 
14.
25 p, 6.7 MB AFM Imaging of Mercaptobenzoic Acid on Au(110) : Submolecular Contrast with Metal Tips / Hauptmann, Nadine (Radboud University. Institute for Molecules and Materials.) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Abufager, Paula (Universidad Nacional de Rosario. Instituto de Física de Rosario) ; Lorente, Nicolás (Centro de Física de Materiales (San Sebastián. España)) ; Berndt, Richard (Christian-Albrechts-Universität zu Kiel. Institut für Experimentelle und Angewandte Physik)
A self-assembled monolayer of mercaptobenzoic acid (MBA) on Au(110) is investigated with scanning tunneling and atomic force microscopy (STM and AFM) and density functional calculations. High-resolution AFM images obtained with metallic tips show clear contrasts between oxygen atoms and phenyl moieties. [...]
2016 - 10.1021/acs.jpclett.6b00684
Journal of physical chemistry letters, Vol. 7, Issue 11 (June 2016) , p. 1984-1990  
15.
9 p, 1.3 MB Functional dependence of resonant harmonics on nanomechanical parameters in dynamic mode atomic force microscopy / Gramazio, Federico (Institut Català de Nanociència i Nanotecnologia) ; Lorenzoni, Matteo (Institut de Microelectrònica de Barcelona) ; Pérez-Murano, Francesc (Institut de Microelectrònica de Barcelona) ; Rull Trinidad, Enrique (Technische Universiteit Delft) ; Staufer, Urs (Technische Universiteit Delft) ; Fraxedas, Jordi (Institut Català de Nanociència i Nanotecnologia)
We present a combined theoretical and experimental study of the dependence of resonant higher harmonics of rectangular cantilevers of an atomic force microscope (AFM) as a function of relevant parameters such as the cantilever force constant, tip radius and free oscillation amplitude as well as the stiffness of the sample's surface. [...]
2017 - 10.3762/bjnano.8.90
Beilstein journal of nanotechnology, Vol. 8 (April 2017) , p. 883-891  
16.
10 p, 2.3 MB Unlocking higher harmonics in atomic force microscopy with gentle interactions / Santos, Sergio (Universitat Politècnica de Catalunya. Departament de Disseny i Programació de Sistemes Electrònics) ; Barcons, Victor (Universitat Politècnica de Catalunya. Departament de Disseny i Programació de Sistemes Electrònics) ; Font, Josep (Universitat Politècnica de Catalunya. Departament de Disseny i Programació de Sistemes Electrònics) ; Verdaguer Prats, Albert (Institut Català de Nanociència i Nanotecnologia)
In dynamic atomic force microscopy, nanoscale properties are encoded in the higher harmonics. Nevertheless, when gentle interactions and minimal invasiveness are required, these harmonics are typically undetectable. [...]
2014 - 10.3762/bjnano.5.29
Beilstein journal of nanotechnology, Vol. 5 (2014) , p. 268-277  
17.
19 p, 606.3 KB Dually actuated atomic force microscope with miniaturized magnetic bead-actuators for single-molecule force measurements / Sevim, Semih (Bogazici University. Department of Electrical and Electronics Engineering) ; Ozer, Sevil (Bogazici University. Department of Electrical and Electronics Engineering) ; Feng, Luying (Bogazici University. Department of Electrical and Electronics Engineering) ; Wurzel, Joel (University of Würzburg. Institute of Pharmacy and Food Chemistry) ; Fakhraee, Arielle (Aeon Scientific AG) ; Shamsudhin, Naveen (ETH Zürich. Institute of Robotics and Intelligent Systems) ; Jang, Bumjin (ETH Zürich. Institute of Robotics and Intelligent Systems) ; Alcantara, Carlos (ETH Zürich. Institute of Robotics and Intelligent Systems) ; Ergeneman, Olgaç (ETH Zürich. Institute of Robotics and Intelligent Systems) ; Pellicer Vilà, Eva Maria (Universitat Autònoma de Barcelona. Departament de Física) ; Sort Viñas, Jordi (Institució Catalana de Recerca i Estudis Avançats) ; Lühmann, Tessa (University of Würzburg. Institute of Pharmacy and Food Chemistry) ; Pané i Vidal, Salvador (ETH Zürich. Institute of Robotics and Intelligent Systems) ; Nelson, Bradley J. (ETH Zürich. Institute of Robotics and Intelligent Systems) ; Torun, Hamdi (Bogazici University. Department of Electrical and Electronics Engineering)
We report for the first time on a novel Atomic Force Microscopy (AFM) technique with dual actuation capabilities using both piezo and magnetic bead actuation for advanced single-molecule force spectroscopy experiments. [...]
2016 - 10.1039/c6nh00134c
Nanoscale, Vol. 1, Issue 6 (November 2016) , p. 488-495  
18.
17 p, 2.7 MB Conductive-AFM topography and current maps simulator for the study of polycrystalline high-k dielectrics / Couso, Carlos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Iglesias, V. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, a simulator of conductive atomic force microscopy (C-AFM) was developed to reproduce topography and current maps. In order to test the results, the authors used the simulator to investigate the influence of the C-AFM tip on topography measurements of polycrystalline high-k dielectrics, and compared the results with experimental data. [...]
2015 - 10.1116/1.4915328
Journal of Vaccuum Science and Technology B, Vol. 33 No. 3 (May-June 2015) , p031801/1-031801/6  
19.
14 p, 5.7 MB Scanning probe microscopies for analytical studies at the nanometer scale / Esplandiu Egido, Maria José (Universitat Autònoma de Barcelona. Departament de Química)
The scanning probe microscopies (SPM) have transformed the way of studying the structure and the properties of a wide variety of systems. Without doubt, they have exerted a pivotal role in many scientific disciplines like physics, chemistry, biology and engineering and have helped to give birth to novel fields such as the nanoscience and nanotechnology. [...]
Les microscòpies locals de rastreig han transformat la manera d'estudiar l'estructura i les propietats d'una gran varietat de sistemes. Sens dubte, han tingut un paper essencial en moltes disciplines, com ara la física, la química, la biologia i l'enginyeria, i han contribuït al naixement de nous camps, com ara la nanociència i la nanotecnologia. [...]

2005
Contributions to science, Vol. 3, Núm. 1 (2005) , p. 33-46  
20.
5 p, 1.9 MB Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale / Fontserè Recuenco, Abel (Centro Nacional de Microelectrónica) ; Perez-Tomas, Amador (Centro Nacional de Microelectrónica) ; Placidi, Marcel (Centro Nacional de Microelectrónica) ; Aguiló Llobet, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics) ; Baron, N. (Centre National de la Recherche Scientifique (França)) ; Chenot, S. (Centre National de la Recherche Scientifique (França)) ; Cordier, Y. (Centre National de la Recherche Scientifique (França)) ; Moreno, J. C. (Centre National de la Recherche Scientifique (França)) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lanza, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. [...]
2012 - 10.1063/1.4748115
Applied physics letters, Vol. 101, Issue 9 (August 2012) , p. 093505/1-093505/4  
21.
4 p, 325.4 KB Using exchange bias to extend the temperature range of square loop behavior in [Pt/Co] multilayers with perpendicular anisotropy / Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ; Suriñach, Santiago (Suriñach Cornet) (Universitat Autònoma de Barcelona. Departament de Física) ; Garcia, F. (SPINTEC (Spin Electronics Research)) ; Auffret, Stéphane (SPINTEC (Spin Electronics Research)) ; Rodmacq, B. (SPINTEC (Spin Electronics Research)) ; Dieny, B. (SPINTEC (Spin Electronics Research)) ; Langlais, Veronique (Universitat Autònoma de Barcelona. Departament de Física) ; Muñoz Domínguez, Juan Santiago (Universitat Autònoma de Barcelona. Departament de Física) ; Baró, M. D.. (Universitat Autònoma de Barcelona. Departament de Física) ; Nogués, Josep (Universitat Autònoma de Barcelona. Departament de Física)
The temperature dependence of the magnetic properties of [Pt/Co]multilayers (ML), exhibiting perpendicular anisotropy, with and without exchange biasing with an antiferromagnet(AFM) has been investigated. [...]
2005 - 10.1063/1.2139840
Applied physics letters, Vol. 87, Issue 24 (December 2005) , p. 242504/1-242504/3  
22.
4 p, 503.7 KB Surface behavior of La2/3Ca1/3MnO3 epitaxial thin films / Abad, Llibertat (Institut de Ciència de Materials de Barcelona) ; Martínez, Benjamín (Institut de Ciència de Materials de Barcelona) ; Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ; American Physical Society
The role of the surface layers in La2/3Ca1/3MnO3 magnetic oxide epitaxialthin films is analyzed. We show that the topmost layers do play a very relevant role on the transport properties acting as an insulating barrier. [...]
2005 - 10.1063/1.2133925
Applied physics letters, Vol. 87, Issue 21 (November 2005) , p. 212502  
23.
4 p, 346.4 KB Large exchange bias and its connection to interface structure in FeF2-Fe bilayers / Nogués, Josep (University of California-San Diego. Physics Department) ; Lederman, D. (University of California, San Diego. Department of Physics) ; Moran, T. J.. (University of California, San Diego. Department of Physics) ; Schuller, Ivan K. (University of California, San Diego. Department of Physics) ; Rao, K. V. (Kungl. Tekniska högskolan. Department of Condensed Matter Physics) ; American Physical Society
Large exchange bias effects (ΔE 1. 1 erg/cm2) were observed in antiferromagnetic (FeF2)-ferromagnetic (Fe) bilayers grown on MgO. The FeF2 grows along the spin-compensated (110) direction. The FeF2-Fe interface roughness was characterized using specular and diffuse x-ray diffraction and atomic force microscopy. [...]
1996 - 10.1063/1.115819
Applied physics letters, Vol. 68, Issue 22 (May 1996) , p. 3186-3188  

Articles : 39 registres trobats   inicianterior14 - 23següentfinal  anar al registre:
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