Articles

Articles 304 records found  previous11 - 20nextend  jump to record: Search took 0.00 seconds. 
11.
4 p, 664.3 KB 180 diffusion through amorphous SiOs and cristobalite / Rodríguez Viejo, Javier (Institut des Sciences et de Génie des Matériaux et Procédés (Font-Romeu, França)) ; Sibieude, F. (Institut des Sciences et de Génie des Matériaux et Procédés (Font-Romeu, França)) ; Clavaguera-Mora, M. T. (Universitat Autònoma de Barcelona. Departament de Física) ; Monty, C. (Laboratoire de Physique des Matériaux (Meudon, França)) ; American Physical Society
Secondary ion mass spectrometry was used to profile the diffusion of oxygen in polycrystalline β‐cristobalite and vitreous SiO2. The tracer concentration profiles of cristobalite are consistent with a model based on two mechanisms: bulk and short‐circuit diffusion. [...]
1993 - 10.1063/1.110644
Applied Physics Letters, Vol. 63, Issue 14 (October 1993) , p. 1906-1908  
12.
4 p, 332.2 KB Direct measurements of magnetostrictive process in amorphous wires using scanning tunneling microscopy / Costa, J. L. (Kungl. Tekniska högskolan. Department of Condensed Matter Physics) ; Nogués i Sanmiquel, Josep (Institut Català de Nanociència i Nanotecnologia) ; Rao, K. V. (Kungl. Tekniska högskolan. Department of Condensed Matter Physics) ; American Physical Society
We demonstrate a versatile capability to measure directly the magnetostrictive properties through the magnetization process on a nanometric scale using a modified scanning tunneling microscope. Single 10 mm long, 125 μm diam amorphouswires of both positive and negative magnetostriction have been studied and the data are compared with the hysteretic loops determined by both ac and SQUID magnetic measurements. [...]
1995 - 10.1063/1.113762
Applied Physics Letters, Vol. 66, Issue 24 (June 1995) , p. 3374-3376  
13.
4 p, 346.4 KB Large exchange bias and its connection to interface structure in FeF2–Fe bilayers / Nogués i Sanmiquel, Josep (Institut Català de Nanociència i Nanotecnologia) ; Lederman, D. (University of California, San Diego. Department of Physics) ; Morán, T. J. (University of California, San Diego. Department of Physics) ; Schuller, Ivan K. (University of California, San Diego. Department of Physics) ; Rao, K. V. (Kungl. Tekniska högskolan. Department of Condensed Matter Physics) ; American Physical Society
Large exchange bias effects (ΔE 1. 1 erg/cm2) were observed in antiferromagnetic (FeF2)–ferromagnetic (Fe) bilayers grown on MgO. The FeF2 grows along the spin‐compensated (110) direction. The FeF2–Fe interface roughness was characterized using specular and diffuse x‐ray diffraction and atomic force microscopy. [...]
1996 - 10.1063/1.115819
Applied Physics Letters, Vol. 68, Issue 22 (May 1996) , p. 3186-3188  
14.
4 p, 296.7 KB Second harmonic generation in a photonic crystal / Martorell, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ; Vilaseca, Ramon (Universitat Politècnica de Catalunya. Department de Física i Enginyeria Nuclear) ; Corbalán, R. (Ramón) (Universitat Autònoma de Barcelona. Departament de Física) ; American Physical Society
Phase matched second harmonic generation is observed experimentally in a centrosymmetric crystalline lattice of dielectric spheres of optical dimensions. The inversion symmetry is broken locally at the surface of each sphere in such a way that the scattered second harmonic light interferes constructively leading to a nonvanishing macroscopic field. [...]
1997 - 10.1063/1.118244
Applied Physics Letters, Vol. 70, Issue 6 (February 1997) , p. 702-704  
15.
4 p, 339.7 KB Relaxation process of Fe(CuNb)SiB amorphous alloys investigated by dynamical calorimetry / Zhu, J. (Universitat Autònoma de Barcelona. Departament de Física) ; Clavaguera-Mora, M. T. (Universitat Autònoma de Barcelona. Departament de Física) ; Clavaguera, N. (Clavaguera Plaja) (Universitat de Barcelona. Deparamento ECM, Física de l'Estat Sòlid) ; American Physical Society
Differential scanning calorimetry and dynamic differential scanning calorimetry were used to analyze the relaxation process of Fe(CuNb)SiB amorphous alloys. The Curie temperature(TC) evolution of the amorphous phase during relaxation as a function of heating rate, time and pre-annealing temperature were measured. [...]
1997 - 10.1063/1.118677
Applied Physics Letters, Vol. 70, Issue 13 (March 1997) , p. 1709-1711  
16.
4 p, 307.5 KB Hydrogen desorption in SiGe films : a diffusion limited process / Vizoso San Segundo, Jesús (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
A model to explain the hydrogen desorption kinetics in SiGe alloys is presented. This is an extension of a previous desorption model of hydrogen from Si, that considers the presence of three dimer types in the surface in which hydrogen atoms tend to pair before the desorptionreaction. [...]
1997 - 10.1063/1.118429
Applied Physics Letters, Vol. 70, Issue 24 (June 1997) , p. 3287-3289  
17.
4 p, 327.1 KB Cathodoluminescence and photoluminescence of highly luminescent CdSe/ZnS quantum dot composites / Rodríguez Viejo , Javier (Massachusetts Institute of Technology. Department of Chemical Engineering) ; Jensen, K. F. (Massachusetts Institute of Technology. Department of Chemical Engineering) ; Mattoussi, H. (Massachusetts Institute of Technology. Department of Materials Science and Engineering) ; Michel, J. (Massachusetts Institute of Technology. Department of Materials Science and Engineering) ; Dabbousi, B. (Massachusetts Institute of Technology. Department of Chemistry) ; Bawendi, M. G. (Massachusetts Institute of Technology. Department of Chemistry) ; American Physical Society
We report room-temperature cathodoluminescence and photoluminescence spectra originating from ZnS overcoated CdSenanocrystals, 33 and 42 Å in diameter, embedded in a ZnS matrix. The thin-filmquantum dot composites were synthesized by electrospray organometallic chemical vapor deposition. [...]
1997 - 10.1063/1.119043
Applied Physics Letters, Vol. 70, Num. 16 (April 1997) , p. 2132-2134  
18.
4 p, 414.9 KB Local oxidation of silicon surfaces by dynamic force microscopy : nanofabrication and water bridge formation / García, Ricardo (Instituto de Microelectronica de Madrid) ; Calleja, M. (Instituto de Microelectronica de Madrid) ; Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
Local oxidation of siliconsurfaces by atomic force microscopy is a very promising lithographic approach at nanometer scale. Here, we study the reproducibility, voltage dependence, and kinetics when the oxidation is performed by dynamic force microscopy modes. [...]
1998 - 10.1063/1.121340
Applied Physics Letters, Vol. 72, Issue 18 (May 1998) , p. 2295-2297  
19.
4 p, 309.7 KB Soft breakdown fluctuation events in ultrathin SiO2 layers / Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
When an ultrathin (<5 nm) oxide is subjected to electrical stress, several soft-breakdown events can occur prior to the final dielectric breakdown. After the occurrence of such failure events, the current–voltage (I–V)characteristic corresponds to the superposition of highly conductive spots and background conduction through the undegraded capacitor area. [...]
1998 - 10.1063/1.121910
Applied Physics Letters, Vol. 73, Issue 4 (July 1998) , p. 490-492  
20.
4 p, 330.0 KB Quantum Monte Carlo simulation of resonant tunneling diodes based on the Wigner distribution function formalism / García García, Juan José (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Oriols Pladevall, Xavier (Universitat Autònoma de Barcelona. Departament d’Enginyeria Electrònica) ; American Physical Society
A tool for the simulation of resonant tunneling diodes (RTDs) has been developed. This is based on the solution of the quantum Liouville equation in the active region of the device and the Boltzman transport equation in the regions adjacent to the contacts by means of a Monte Carlo algorithm. [...]
1998 - 10.1063/1.122800
Applied Physics Letters, Vol. 73, Num. 24 (December 1998) , p. 3539-3541  

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