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Articles 21 records found  previous11 - 20next  jump to record: Search took 0.01 seconds. 
11.
7 p, 4.4 MB NH₃ molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations / Miranda, Álvaro (Institut de Ciència de Materials de Barcelona) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
The possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). [...]
2012 - 10.1186/1556-276X-7-308
Nanoscale Research Letters, Vol. 7 (June 2012) , art. 308  
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12.
18 p, 3.0 MB Thermal transport in porous Si nanowires from approach-to-equilibrium molecular dynamics calculations / Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Dettori, Riccardo (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Melis, Claudio (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Colombo, Luciano (Università degli Studi di Cagliari. Dipartimento di Fisica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
We study thermal transport in porous Si nanowires (SiNWs) by means of approach-to-equilibrium molecular dynamics simulations. We show that the presence of pores greatly reduces the thermal conductivity, κ, of the SiNWs as long mean free path phonons are suppressed. [...]
2016 - 10.1063/1.4955038
Applied physics letters, Vol. 109, Issue 1 (Jul. 2016) , p. 131071-131074  
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13.
33 p, 1.1 MB Short channel effects in graphene-based field effect transistors targeting radio-frequency applications / Feijoo, Pedro Carlos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although twodimensional (2D) materials provide a superior immunity to short channel effects (SCEs) than bulk materials, they could dominate in scaled GFETs. [...]
2016 - 10.1088/2053-1583/3/2/025036
2D Materials, Vol. 3, no. 2 (June 2016) , p. 1-13  
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14.
4 p, 673.6 KB Resonant interband tunneling spin filter / Ting, David Z. -Y. (California Institute of Technology. Jet Propulsion Laboratory) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We propose an InAs/GaSb/AlSb-based asymmetric resonant interband tunnelingdiode as a spin filter. The interband design exploits large valence band spin-orbit interaction to provide strong spin selectivity, without suffering from fast hole spin relaxation. [...]
2002 - 10.1063/1.1524700
Applied physics letters, Vol. 81, Issue 22 (November 2002) , p. 4198-4200  
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15.
4 p, 313.5 KB A resonant spin lifetime transistor / Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Ting, David Z. -Y. (California Institute of Technology. Jet Propulsion Laboratory) ; Chang, Y. -C. (University of Illinois at Urbana-Champaign. Department of Physics) ; American Physical Society
We present a device concept for a spintronictransistor based on the spin relaxation properties a two-dimensional electron gas(2DEG). The device design is very similar to that of the Datta and Das spin transistor. [...]
2003 - 10.1063/1.1601693
Applied physics letters, Vol. 83, Issue 7 (August 2003) , p. 1462-1464  
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16.
4 p, 695.9 KB Bidirectional resonant tunneling spin pump / Ting, David Z. -Y. (California Institute of Technology. Jet Propulsion Laboratory) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We propose a mechanism for achieving bidirectional spin pumping in conventional nonmagnetic semiconductorresonant tunnelingheterostructures under zero magnetic field. The device is designed specifically to take advantage of the special spin configuration described by the Rashba effect in asymmetric quantum wells. [...]
2003 - 10.1063/1.1602158
Applied physics letters, Vol. 83, Issue 7 (August 2003) , p. 1391-1393  
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17.
4 p, 563.1 KB Ordered arrays of quantum wires through hole patterning : ab initio and empirical electronic structure calculations / Rurali, Riccardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We propose an approach to the fabrication of one-dimensional nanostructures, based on the design of a pattern of channels onto a semiconductor surface. The feasibility of this approach is demonstrated by means of ab initio and empirical electronic structure calculations. [...]
2007 - 10.1063/1.2696774
Applied physics letters, Vol. 90, Issue 8 (February 2007) , p. 083118/1-083118/3  
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18.
4 p, 322.3 KB High-frequency behavior of the Datta-Das spin transistor / López Silva, Hender Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Oriols, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We have studied the high-frequency behavior and the ultimate limiting factor to the cutoff frequency for the Datta-Das spin transistor using deviceMonte Carlo simulations. We have found that the maximum frequency of operation is not related to intrinsic parameters to the spin of the carriers, such as the Larmor frequency or the spin lifetime, but to the transit time through the channel.
2008 - 10.1063/1.3021073
Applied physics letters, Vol. 93, Issue 19 (November 2008) , p. 193502/1-193502/3  
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19.
5 p, 1.1 MB Quantum size effects in hafnium-oxide resistive switching / Long, Shibing (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lian, Xiaojuan (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cagli, Carlo (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Perniola, Luca (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Liu, Ming (Chinese Academy of Sciences. Laboratory of Nanofabrication and Novel Device Integration (Beijing, Xina)) ; American Physical Society
Discrete changes of conductance of the order of G0 = 2e2/h reported during the unipolar reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. [...]
2013 - 10.1063/1.4802265
Applied physics letters, Vol. 102, Issue 18 (May 2013) , p. 183505/1-183505/4  
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20.
4 p, 2.1 MB Microscopic dielectric response functions in semiconductor quantum dots / Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Wang, L. -W. (Lawrence Berkeley National Laboratory. Computational Research Division) ; American Physical Society
We calculate and model the microscopic dielectric response function for quantum dots using first principle methods. We find that the response is bulklike inside the quantum dots, and the reduction of the macroscopic dielectric constants is a surface effect. [...]
2005 - 10.1103/PhysRevLett.94.236804
Physical review letters, Vol. 94, Issue 23 (June 2005) , p. 236804  
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