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Articles 30 records found  previous11 - 20next  jump to record: Search took 0.01 seconds. 
11.
22 p, 2.5 MB Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality / Zamani, Mahdi (École Polytechnique Fédérale de Lausanne) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne) ; Güniat, Lucas (École Polytechnique Fédérale de Lausanne) ; Ghisalberti, Lea (École Polytechnique Fédérale de Lausanne) ; Potts, Heidi A. (École Polytechnique Fédérale de Lausanne) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne) ; Markov, Edoardo. (École Polytechnique Fédérale de Lausanne) ; Kim, Wonjong (École Polytechnique Fédérale de Lausanne) ; Leran, Jean-Baptiste (École Polytechnique Fédérale de Lausanne) ; Dubrovskii, Vladimir G. (ITMO University) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds. Nanowires grow mostly along the (111) direction for energetic reasons. Arsenide and phosphide nanowires grow along (111)B, implying a group V termination of the (111) bilayers. [...]
2018 - 10.1039/c8nr05787g
Nanoscale, Vol. 10, Issue 36 (September 2018) , p. 17080-17091  
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12.
7 p, 720.6 KB Raman thermometry analysis : Modelling assumptions revisited / Jaramillo Fernández, Juliana (Kungl. Tekniska högskolan (Estocolm (Suècia)) ; Chávez Ángel, Emigdio (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
In Raman thermometry, several assumptions are made to model the heat conduction and to extract the thermal conductivity of the samples from the measured data. In this work, the heat conduction in bulk and mesa-like samples was investigated by numerical simulation and measured by the temperature-induced Raman shift method, to study the range of applicability of these assumptions. [...]
2018 - 10.1016/j.applthermaleng.2017.11.033
Applied thermal engineering, Vol. 130 (February 2018) , p. 1175-1181  
Detailed record - Creative Commons
13.
18 p, 1.8 MB Unraveling the origin of magnetism in mesoporous Cu-doped SnO₂ magnetic semiconductor / Fan, Junpeng (Universitat Autònoma de Barcelona. Departament de Física) ; Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ; Guerrero, Miguel (Universitat Autònoma de Barcelona. Departament de Física) ; Quintana Puebla, Alberto (Universitat Autònoma de Barcelona. Departament de Física) ; Weschke, Eugen (Helmholtz-Zentrum Berlin für Materialien und Energie) ; Pellicer Vilà, Eva Maria (Universitat Autònoma de Barcelona. Departament de Física) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
The origin of magnetism in wide-gap semiconductors doped with non-ferromagnetic 3d transition metals still remains intriguing. In this article, insights in the magnetic properties of ordered mesoporous Cu-doped SnO₂ powders, prepared by hard-templating, have been unraveled. [...]
2017 - 10.3390/nano7110348
Nanomaterials, Vol. 7, issue 11 (Nov. 2017) , art. 348  
Detailed record - Creative Commons
14.
4 p, 448.3 KB Monitoring defects in III-V materials : a nanoscale CAFM study / Iglesias, V. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Wu, Q. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Bersuker, G. (Sematech) ; Cordes, A. (Sematech)
The implementation of high mobility devices requires growing III-V materials on silicon substrates. However, due to the lattice mismatch between these materials, III-V semiconductors tend to develop structural defects affecting device electrical characteristics. [...]
2015 - 10.1016/j.mee.2015.04.058
Microelectronic engineering, Vol. 147 (Nov. 2015) , p. 176-179  
Detailed record - Creative Commons
15.
5 p, 1.9 MB Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale / Fontserè Recuenco, Abel (Centro Nacional de Microelectrónica) ; Perez-Tomas, Amador (Centro Nacional de Microelectrónica) ; Placidi, Marcel (Centro Nacional de Microelectrónica) ; Aguiló Llobet, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics) ; Baron, N. (Centre National de la Recherche Scientifique (França)) ; Chenot, S. (Centre National de la Recherche Scientifique (França)) ; Cordier, Y. (Centre National de la Recherche Scientifique (França)) ; Moreno, J. C. (Centre National de la Recherche Scientifique (França)) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lanza, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. [...]
2012 - 10.1063/1.4748115
Applied physics letters, Vol. 101, Issue 9 (August 2012) , p. 093505/1-093505/4  
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16.
4 p, 752.7 KB Role of the microstructure on the magnetic properties of Co-doped ZnO nanoparticles / Martínez, Benjamín (Institut de Ciència de Materials de Barcelona) ; Sandiumenge Ortiz, Felip (Institut de Ciència de Materials de Barcelona) ; Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ; Arbiol i Cobos, Jordi (Universitat de Barcelona. Serveis Científics) ; Sibieude, F. (Institut de science et génie des Matériaux et Procédés (Font Romeu, França)) ; Monty, C. (Institut de science et génie des Matériaux et Procédés (Font Romeu, França)) ; American Physical Society
We report on the magnetic and structural properties of Co-doped ZnO nanoparticles prepared by the vaporization-condensation method in a solar reactor. X-ray diffraction data and high-resolution electron microscopy (HREM) confirm the total absence of metallic Co clusters or any other phase different from würtzite-type ZnO. [...]
2005 - 10.1063/1.1880433
Applied physics letters, Vol. 86, Issue 10 (March 2005) , p. 103113/1-103113/3  
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17.
4 p, 327.1 KB Cathodoluminescence and photoluminescence of highly luminescent CdSe/ZnS quantum dot composites / Rodríguez-Viejo, Javier (Massachusetts Institute of Technology. Department of Chemical Engineering) ; Jensen, K. F. (Massachusetts Institute of Technology. Department of Chemical Engineering) ; Mattoussi, H. (Massachusetts Institute of Technology. Department of Materials Science and Engineering) ; Michel, J. (Massachusetts Institute of Technology. Department of Materials Science and Engineering) ; Dabbousi, B. (Massachusetts Institute of Technology. Department of Chemistry) ; Bawendi, M. G. (Massachusetts Institute of Technology. Department of Chemistry) ; American Physical Society
We report room-temperature cathodoluminescence and photoluminescence spectra originating from ZnS overcoated CdSenanocrystals, 33 and 42 Å in diameter, embedded in a ZnS matrix. The thin-filmquantum dot composites were synthesized by electrospray organometallic chemical vapor deposition. [...]
1997 - 10.1063/1.119043
Applied physics letters, Vol. 70, Num. 16 (April 1997) , p. 2132-2134  
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18.
4 p, 288.8 KB Modeling the breakdown spots in silicon dioxide films as point contacts / Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
Experiments and simulations are combined to demonstrate that the hard dielectric breakdown of thin SiO2 films in polycrystaline silicon/oxide/semiconductor structures leads to the formation of conduction paths with atomic-size dimensions which behave as point contacts between the silicon electrodes. [...]
1999 - 10.1063/1.124566
Applied physics letters, Vol. 75, Issue 7 (June 1999) , p. 959-961  
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19.
4 p, 300.8 KB High frequency components of current fluctuations in semiconductor tunneling barriers / Oriols, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
The power spectral density of current noise in phase-coherent semiconductortunneling scenarios is studied in terms of Bohm trajectories associated to time-dependent wave packets. In particular, the influence of the particles reflected by the barrier on the noise spectrum is analyzed. [...]
2002 - 10.1063/1.1482136
Applied physics letters, Vol. 80, Issue 21 (May 2002) , p. 4048-4050  
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20.
4 p, 673.6 KB Resonant interband tunneling spin filter / Ting, David Z. -Y. (California Institute of Technology. Jet Propulsion Laboratory) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We propose an InAs/GaSb/AlSb-based asymmetric resonant interband tunnelingdiode as a spin filter. The interband design exploits large valence band spin-orbit interaction to provide strong spin selectivity, without suffering from fast hole spin relaxation. [...]
2002 - 10.1063/1.1524700
Applied physics letters, Vol. 81, Issue 22 (November 2002) , p. 4198-4200  
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