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Articles 44 records found  beginprevious15 - 24nextend  jump to record: Search took 0.00 seconds. 
15.
18 p, 693.6 KB On the application of a diffusive memristor compact model to neuromorphic circuits / Cisternas Ferri, Agustín (Universidad de Buenos Aires) ; Rapoport, Alan (Universidad de Buenos Aires) ; Fierens, Pablo I. (Instituto Tecnológico de Buenos Aires) ; Patterson, German A. (Instituto Tecnológico de Buenos Aires) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Memristive devices have found application in both random access memory and neuromorphic circuits. In particular, it is known that their behavior resembles that of neuronal synapses. However, it is not simple to come by samples of memristors and adjusting their parameters to change their response requires a laborious fabrication process. [...]
2019 - 10.3390/ma12142260
Materials, Vol. 12, Issue 14 (July 2019) , art. 2260  
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16.
22 p, 713.4 KB A new method for estimating the conductive filament temperature in OxRAM devices based on escape rate theory / Rodríguez Fernández, Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Muñoz Gorriz, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Because of the atomic nature of the system under study, an estimation of the temperature of the conductive filament (CF) in OxRAM devices as a function of the applied bias can only be obtained by means of indirect methods, usually electrothermal simulations. [...]
2018 - 10.1016/j.microrel.2018.06.120
Microelectronics reliability, Vol. 88-90 (September 2018) , p. 142-146
2 documents
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17.
5 p, 647.7 KB Switching Voltage and Time Statistics of Filamentary Conductive Paths in HfO2-Based ReRAM Devices / Rodríguez Fernández, Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cagli, Carlo (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Switching voltage and time statistics of HfO2-based one transistor-one resistor structures are investigated with the aim of clarifying the underlying physical mechanism that governs the formation and rupture of filamentary paths in the insulating layer. [...]
2018 - 10.1109/LED.2018.2822047
IEEE electron device letters, Vol. 39, Issue 5 (May 2018) , p. 656-659  
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18.
26 p, 1.0 MB Characterization of HfO2-based devices with indication of second order memristor effects / Rodríguez Fernández, Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cagli, Carlo (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Perniola, Luca (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Resistive switching is investigated in TiN/Ti/HfO (10 nm)/TiN devices in series with a NMOS transistor as selector in a 1T1R configuration. A complete electrical characterization of the devices is carried out using DC voltage loops, constant-voltage stressed and pulses with varying voltage amplitude and time width. [...]
2018 - 10.1016/j.mee.2018.04.006
Microelectronic engineering, Vol. 195 (August 2018) , p. 101-106
2 documents
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19.
6 p, 666.5 KB Simple method for monitoring the switching activity in memristive cross-point arrays with line resistance effects / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Morell Pérez, Antoni (Universitat Autònoma de Barcelona. Departament de Telecomunicació i Enginyeria de Sistemes) ; Muñoz Gorriz, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
A simple method for monitoring the switching activity (forming, set, reset events and stuck-at-0/1 faults) in memristive cross-point arrays with line resistance effects is proposed. The method consists in correlating incremental current changes in a four-terminal configuration with the location of the switching cell within the array. [...]
2019 - 10.1016/j.microrel.2019.06.019
Microelectronics reliability, Vol. 100-101 (September 2019) , art. 113327
2 documents
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20.
8 p, 3.6 MB Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides / Aguirre, Fernando Leonel (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ; Rodríguez Fernández, Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pazos, Sebastián Matías (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Palumbo, Félix (Universidad Tecnológica Nacional (Buenos Aires, Argentina))
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0. [...]
2019 - 10.1109/TED.2019.2922555
IEEE transactions on electron devices, Vol. 66, Issue 8 (August 2019) , p. 3349-3355  
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21.
6 p, 1.1 MB Analysis on the filament structure evolution in reset transition of Cu/HfO₂/Pt RRAM device / Zhang, Meiyun (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). [...]
2016 - 10.1186/s11671-016-1484-8
Nanoscale Research Letters, Vol. 11 (May 2016) , art. 269  
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22.
30 p, 3.6 MB Conductance quantization in resistive random access memory / Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Yang (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Hu, Chen (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Teng, Jiao (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. [...]
2015 - 10.1186/s11671-015-1118-6
Nanoscale Research Letters, Vol. 10 (December 2015) , art. 420  
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23.
8 p, 1.2 MB Voltage and power-controlled regimes in the progressive unipolar RESET transition of HfO₂-based RRAM / Long, Shibing (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Perniola, Luca (Laboratoire d'électronique des technologies de l'information. MINATEC) ; Cagli, Carlo (Laboratoire d'électronique des technologies de l'information. MINATEC) ; Buckley, Julien (Laboratoire d'électronique des technologies de l'information. MINATEC) ; Lian, Xiaojuan (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pan, Feng (Tsinghua University. Laboratory of Advanced Materials) ; Liu, Ming (Chinese Academy of Sciences. Laboratory of Nanofabrication and Novel Device Integration (Beijing, Xina)) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications. Understanding the physics of RS and the nature of CF is of utmost importance to control the performance, variability and reliability of resistive switching memory (RRAM). [...]
2013 - 10.1038/srep02929
Scientific reports, Vol. 3, (October 2013) , art. 2929  
Detailed record - Creative Commons
24.
5 p, 1.3 MB Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO3/SrRuO3 switches / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Tsurumaki-Fukuchi, A. (National Institute of Advanced Industrial Science and Technology (AIST)) ; Blasco Solans, Juli (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Yamada, Hiroyuki (National Institute of Advanced Industrial Science and Technology (AIST)) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Sawa, A. (National Institute of Advanced Industrial Science and Technology (AIST))
The hysteresis current-voltage (I-V) loops in Pt/BiFeO3/SrRuO3 structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. [...]
2014 - 10.1063/1.4894116
Applied physics letters, Vol. 105 (August 2014) , p. 82904-01/82904-04  
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Articles : 44 records found   beginprevious15 - 24nextend  jump to record:
See also: similar author names
1 Sune, J.
1 Suñe, J.
14 Suñe, Jordi
1 Suñé, J.
55 Suñé, Jordi,
2 Suñé, Jordi, 1963-
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