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Articles 28 records found  beginprevious17 - 26next  jump to record: Search took 0.01 seconds. 
17.
8 p, 2.1 MB Long-lived excitons in GaN/AlN nanowire heterostructures / Beeler, Mark (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Lim, Caroline B. (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Hille, Pascal (Justus Liebig-Universität Gießen. Physikalisches Institut) ; Bleuse, Joel (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França)) ; Schörmann, Jörg (I. Physikalisches Institut, Justus-Liebig-Universität Gießen) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (I. Physikalisches Institut, Justus-Liebig-Universität Gießen) ; Monroy, Eva (Commissariat à l'Énergie Atomique et aux Énergies Alternatives (França))
GaN/AlN nanowire heterostructures can display photoluminescence (PL) decay times on the order of microseconds that persist up to room temperature. Doping the GaN nanodisk insertions with Ge can reduce these PL decay times by two orders of magnitude. [...]
2015 - 10.1103/PhysRevB.91.205440
Physical review B : Condensed matter and materials physics, Vol. 91, issue 20 (May 2015) , art. 205440  
Detailed record - Creative Commons
18.
10 p, 4.7 MB Phonon engineering in isotopically disordered silicon nanowires / Mukherjee, Samik (Polytechnique Montréal. Département de génie physique) ; Givan, Uri (Max-Planck-Institut für Mikrostrukturphysik) ; Senz, Stephan (Max-Planck-Institut für Mikrostrukturphysik) ; Bergeron, A. (Polytechnique Montréal. Département de génie physiquel) ; Francoeur, S. (Polytechnique Montréal. Département de génie physique) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Sekiguchi, T. (Keio University. Department of Applied Physics and Physico-Informatics) ; Itoh, K. M. (Keio University. Department of Applied Physics and Physico-Informatics) ; Isheim, D. (Northwestern University. Department of Materials Science and Engineering) ; Seidman, D. N. (Northwestern University. Department of Materials Science and Engineering) ; Moutanabbir, Oussama (Polytechnique Montréal. Département de génie physique)
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. [...]
2015 - 10.1021/acs.nanolett.5b00708
Nano letters, Vol. 15, issue 6 (Oct. 2015) , p. 3885-3893  
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19.
15 p, 3.9 MB UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices / Lähnemann, Jonas (University Grenoble Alpes) ; Den Hertog, Martien (Institut Néel (Grenoble, França)) ; Hille, Pascal (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Fournier, Thierry (Institut Néel (Grenoble, França)) ; Schörmann, Jörg (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Monroy, Eva (University Grenoble Alpes)
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. [...]
2016 - 10.1021/acs.nanolett.6b00806
Nano letters, Vol. 16, Num. 5 (May 2016) , p. 3260-3267  
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20.
32 p, 3.3 MB Twin-induced InSb nanosails : a convenient high mobility quantum system / De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Leturcq, Renaud (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França)) ; Plissard, Sébastien R. (Centre national de la recherche scientifique. Laboratoire d'analyse et d'architecture des systèmes) ; Rolland, Chloé (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França)) ; Magen Dominguez, Cesar (Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Caroff, Philippe (Institut d'Electronique, de Microélectronique, et de Nanotechnologie (Lille, França))
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. [...]
2016 - 10.1021/acs.nanolett.5b05125
Nano letters, Vol. 16, issue 2 (Oct. 2016) , p. 825-833  
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21.
6 p, 1.6 MB Mn₃O₄@CoMn₂O₄-CoₓOy nanoparticles : Partial cation exchange synthesis and electrocatalytic properties toward the oxygen reduction and evolution reactions / Luo, Zhishan (Institut de Recerca en Energia de Catalunya) ; Irtem, Erdem (Institut de Recerca en Energia de Catalunya) ; Ibáñez, Maria (ETH Zürich. Institute of Inorganic Chemistry) ; Nafria, Raquel (Institut de Recerca en Energia de Catalunya) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Genç, Aziz (Institut Català de Nanociència i Nanotecnologia) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Liu, Yu. (Institut de Recerca en Energia de Catalunya) ; Cadavid, Doris (Institut de Recerca en Energia de Catalunya) ; Llorca, Jordi (Universitat Politècnica de Catalunya. Institut de Tècniques Energètiques) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Andreu, Teresa (Institut de Recerca en Energia de Catalunya) ; Morante, Joan Ramon (Universitat de Barcelona. Departament d'Electrònica) ; Cabot, Andreu (Institució Catalana de Recerca i Estudis Avançats)
Mn₃O₄@CoMn₂O₄ nanoparticles (NPs) were produced at low temperature and ambient atmosphere using a one-pot two-step synthesis protocol involving the cation exchange of Mn by Co in preformed Mn₃O₄ NPs. [...]
2016 - 10.1021/acsami.6b02786
ACS applied materials & interfaces, Vol. 8, Issue 27 (July 2016) , p. 17435-17444  
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22.
44 p, 7.2 MB Disentangling Epitaxial Growth Mechanisms of Solution Derived Functional Oxide Thin Films / Queraltó López, Albert (Institut de Ciència de Materials de Barcelona) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Obradors, Xavier (Institut de Ciència de Materials de Barcelona) ; Puig i Molina, Mª Teresa (Institut de Ciència de Materials de Barcelona)
This study investigates the mechanisms of epitaxial development and functional properties of oxide thin films (CeZrO , LaNiO, and BaSrTiO) grown on single crystal substrates (YO:ZrO, LaAlO, and SrTiO) by the chemical solution deposition approach. [...]
2016 - 10.1002/admi.201600392
Advanced materials interfaces, Vol. 3, Núm. 18 (September 2016) , art. 1600392  
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23.
22 p, 322.6 KB Ultraviolet pulsed laser crystallization of Ba0.8Sr0.2TiO3 films on LaNiO3-coated silicon substrates / Queraltó López, Albert (Institut de Ciència de Materials de Barcelona) ; Pérez del Pino, Ángel (Institut de Ciència de Materials de Barcelona) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Tristany, Mar (Institut de Ciència de Materials de Barcelona) ; Obradors, Xavier (Institut de Ciència de Materials de Barcelona) ; Puig i Molina, Mª Teresa (Institut de Ciència de Materials de Barcelona) ; Trolier-McKinstry, Susan (Pennsylvania State University)
In this work, BaSrTiO (BST) films on LaNiO-buffered SiO/Si (LNO/SiO/Si) substrates were crystallized by pulsed laser irradiation. Solution-derived amorphous barium-strontium-titanate precursor layers were crystallized with a KrF excimer laser in oxygen ambient at fluences ranging from 50 to 75 mJ cm. [...]
2016 - 10.1016/j.ceramint.2015.11.075
Ceramics international, Vol. 42, Núm. 3 (February 2016) , p. 4039-4047  
Detailed record - Creative Commons
24.
15 p, 1.1 MB Ultrafast Epitaxial Growth Kinetics in Functional Oxide Thin Films Grown by Pulsed Laser Annealing of Chemical Solutions / Queraltó López, Albert (Institut de Ciència de Materials de Barcelona) ; Pérez del Pino, Ángel (Institut de Ciència de Materials de Barcelona) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Tristany, Mar (Institut de Ciència de Materials de Barcelona) ; Obradors, Xavier (Institut de Ciència de Materials de Barcelona) ; Puig i Molina, Mª Teresa (Institut de Ciència de Materials de Barcelona)
The crystallization process and physical properties of different functional oxide thin films (CeZrO, LaNiO, BaSrTiO, and LaSrMnO) on single crystal substrates (YO:ZrO, LaAlO, and SrTiO) are studied by pulsed laser annealing (PLA). [...]
2016 - 10.1021/acs.chemmater.6b01968
Chemistry of materials, Vol. 28, Núm. 17 (September 2016) , p. 6136-6145  
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25.
18 p, 1.4 MB Ultrathin High Surface Area Nickel Boride (NixB) Nanosheets as Highly Efficient Electrocatalyst for Oxygen Evolution / Masa, Justus (Ruhr-Universität Bochum (Alemanya)) ; Sinev, Ilya (Ruhr-Universität Bochum (Alemanya)) ; Mistry, Hemma (Ruhr-Universität Bochum (Alemanya)) ; Ventosa, Edgar (Ruhr-Universität Bochum (Alemanya)) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Muhler, Martin (Ruhr-Universität Bochum (Alemanya)) ; Roldan Cuenya, Beatriz (Ruhr-Universität Bochum (Alemanya)) ; Schuhmann, Wolfgang (Ruhr-Universität Bochum (Alemanya))
The overriding obstacle to mass production of hydrogen from water as the premium fuel for powering our planet is the frustratingly slow kinetics of the oxygen evolution reaction (OER). Additionally, inadequate understanding of the key barriers of the OER is a hindrance to insightful design of advanced OER catalysts. [...]
2017 - 10.1002/aenm.201700381
Advanced Energy Materials, Vol. 7, Núm. 17 (September 2017) , article 1700381  
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26.
9 p, 7.7 MB Low-Temperature Growth of Axial Si/Ge Nanowire Heterostructures Enabled by Trisilane / Hui, Ho Yee (Georgia Institute of Technology (Atlanta, Estats Units d'Amèrica)) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Filler, Michael A. (Georgia Institute of Technology (Atlanta, Estats Units d'Amèrica))
Axial Si/Ge heterostructure nanowires, despite their promise in applications ranging from electronics to thermal transport, remain notoriously difficult to synthesize. Here, we grow axial Si/Ge heterostructures at low temperatures using a Au catalyst with a combination of trisilane and digermane. [...]
2017 - 10.1021/acs.chemmater.6b03952
Chemistry of materials, Vol. 29, Núm. 8 (April 2017) , p. 3397-3402  
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