Published articles

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6 p, 1.5 MB Resonant tunnelling features in a suspended silicon nanowire single-hole transistor / Llobet Sixto, Jordi (Institut de Microelectrònica de Barcelona) ; Krali, Emiljana (Imperial College London. Department of Electrical and Electronic Engineering) ; Wang, Chen (Imperial College London. Department of Electrical and Electronic Engineering) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Jones, Mervyn E. (Imperial College London. Department of Electrical and Electronic Engineering) ; Pérez Murano, Francesc (Institut de Microelectrònica de Barcelona) ; Durrani, Zahid A. K. (Imperial College London. Department of Electrical and Electronic Engineering) ; ALBA Laboratori de Llum de Sincrotró
Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. [...]
2015 - 10.1063/1.4936757
Applied physics letters, Vol. 107, issue 22 (Nov. 2015) , art. 223501  

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